Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 μm
We report the results on structural and optical properties of the InSb quantum dots (QDs) grown on InAs(100) substrate by liquid-phase epitaxy (LPE). The uniform self-assembled QDs with high density (0.7–1.9×1010 cm−2) with dimensions of 3–5 nm in height and 11–13 nm in diameter were obtained in the temperature range T=420–445 °C. Characterization of the InSb QDs was performed using atomic force microscopy and transmission electron microscopy methods. InAs or InAsSbP epilayer lattice-matched with InAs substrate was used as capping layer to bury InSb/InAs QDs. Photoluminescence and electroluminescence from the buried InSb QDs were observed in the spectral range 3–4 μm at T=77 K.
KeywordsGraphite Recombination GaSb
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- 5.Moiseev, K.D.; Parkhomenko, Ya.A.; Mikhailova, M.P.; Ankudinov, A.V.; Titkov, A.N.; Yakovlev, Yu.P.: Phys. Tech. Lett., 33, 2007Google Scholar