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Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 μm

  • K. D. Moiseev
  • Ya. A. Parkhomenko
  • M. P. Mikhailova
  • S. S. Kizhaev
  • E. V. Ivanov
  • A. V. Ankudinov
  • A. N. Titkov
  • A. V. Boitsov
  • N. A. Bert
  • Yu. P. Yakovlev
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We report the results on structural and optical properties of the InSb quantum dots (QDs) grown on InAs(100) substrate by liquid-phase epitaxy (LPE). The uniform self-assembled QDs with high density (0.7–1.9×1010 cm−2) with dimensions of 3–5 nm in height and 11–13 nm in diameter were obtained in the temperature range T=420–445 °C. Characterization of the InSb QDs was performed using atomic force microscopy and transmission electron microscopy methods. InAs or InAsSbP epilayer lattice-matched with InAs substrate was used as capping layer to bury InSb/InAs QDs. Photoluminescence and electroluminescence from the buried InSb QDs were observed in the spectral range 3–4 μm at T=77 K.

Keywords

Transmission Electron Microscopy Method Energy Emission Band MOVPE Method Slider Graphite Boat Dark Contrast Spot 
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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • K. D. Moiseev
    • 1
  • Ya. A. Parkhomenko
    • 1
  • M. P. Mikhailova
    • 1
  • S. S. Kizhaev
    • 1
  • E. V. Ivanov
    • 1
  • A. V. Ankudinov
    • 1
  • A. N. Titkov
    • 1
  • A. V. Boitsov
    • 1
  • N. A. Bert
    • 1
  • Yu. P. Yakovlev
    • 1
  1. 1.A. F. Ioffe Physico-Technical InstituteRASSt. PetersburgRussia

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