Abstract
We use a Monte Carlo (MC) approach to investigate the electron transport in Indium Nitride (InN). Simulations with two different setups (one with a bandgap of 1.89 eV and one with bandgap of 0.69 eV) and accounting for all relevant scattering mechanisms are conducted. Results for electron mobility as a function of free carrier concentration and electric field are compared to previous studies and discussed.
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Vitanov, S., Palankovski, V. (2008). Monte Carlo Study of Transport Properties of InN. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_24
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_24
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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