Monte Carlo Study of Transport Properties of InN
We use a Monte Carlo (MC) approach to investigate the electron transport in Indium Nitride (InN). Simulations with two different setups (one with a bandgap of 1.89 eV and one with bandgap of 0.69 eV) and accounting for all relevant scattering mechanisms are conducted. Results for electron mobility as a function of free carrier concentration and electric field are compared to previous studies and discussed.
KeywordsMonte Carlo Electron Mobility Free Carrier Concentration Electron Drift Velocity Polar Optical Phonon
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