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Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation

  • A. S. Villanger
  • T. Brudevoll
  • K. Stenersen
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We present results from a numerical study on carrier dynamics, heating, and melting damage threshold in a 10 μm thick layer of Hg0.72Cd0.28Te induced by 1 μs long laser pulses at photon energies close to the band gap. At the shortest wavelength of 3.8 μm the simulations indicate that surface melting will occur at fluence levels in the range of 2–3 J/cm2, while fluences of more than 10 J/cm2 will be required for melting at wavelengths beyond 5 μm.

Keywords

Auger Recombination Finite Element Method Package Fluence Level Commercial Finite Element Method Conduction Band Valley 
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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. S. Villanger
    • 1
  • T. Brudevoll
    • 1
  • K. Stenersen
    • 1
  1. 1.FFI (Norwegian Defence Research Establishment)KjellerNorway

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