Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation
We present results from a numerical study on carrier dynamics, heating, and melting damage threshold in a 10 μm thick layer of Hg0.72Cd0.28Te induced by 1 μs long laser pulses at photon energies close to the band gap. At the shortest wavelength of 3.8 μm the simulations indicate that surface melting will occur at fluence levels in the range of 2–3 J/cm2, while fluences of more than 10 J/cm2 will be required for melting at wavelengths beyond 5 μm.
KeywordsMigration Recombination GaAs Auger
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