Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy

  • Ichiro Shibasaki
  • Hirotaka Geka
  • Atsusi Okamoto
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)


Electron mobilities of InSb, InSb/AlInSb and InAsSb/AlInSb grown on GaAs(100) were compared as a function of layer thickness and temperature. InAs0.1Sb0.9 thin active layers sandwiched by Al0.1In0.9Sb layers showed the smallest thickness dependence and very large electron mobility at less than 500nm thickness. Basic transport properties and Sn doping effects of the InAs0.1Sb0.9 were studied.


Active Layer Molecular Beam Epitaxy Sheet Resistance Electron Mobility GaAs Substrate 
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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • Ichiro Shibasaki
    • 1
  • Hirotaka Geka
    • 2
  • Atsusi Okamoto
    • 2
  1. 1.Asahikasei CorporationShizuokaJapan
  2. 2.Ashikasei EMD CorporationShizuokaJapan

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