Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy
Electron mobilities of InSb, InSb/AlInSb and InAsSb/AlInSb grown on GaAs(100) were compared as a function of layer thickness and temperature. InAs0.1Sb0.9 thin active layers sandwiched by Al0.1In0.9Sb layers showed the smallest thickness dependence and very large electron mobility at less than 500nm thickness. Basic transport properties and Sn doping effects of the InAs0.1Sb0.9 were studied.
KeywordsActive Layer Molecular Beam Epitaxy Sheet Resistance Electron Mobility GaAs Substrate
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