Abstract
Electron mobilities of InSb, InSb/AlInSb and InAsSb/AlInSb grown on GaAs(100) were compared as a function of layer thickness and temperature. InAs0.1Sb0.9 thin active layers sandwiched by Al0.1In0.9Sb layers showed the smallest thickness dependence and very large electron mobility at less than 500nm thickness. Basic transport properties and Sn doping effects of the InAs0.1Sb0.9 were studied.
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References
A. Okamoto and I. Shibasaki, Transport properties of Sn-doped InSb thin films and applications to Hall element, J. of Crystal Growth, 251, 2003, p.560
A. Okamoto, H. Geka, I. Shibasaki, and K. Yoshida, Transport properties of InSb and InAs thin films on GaAs substrates, J. of Crystal Growth, 278, 2005, p.604
H. Gaka, A. Okamoto, S. Yamada, H. Goto, K. Yoshida, and I. Shibasaki, Properties of InSb single-crystal thin films sandwiched by Al0.1 In0.9 Sb layers with 0.5% lattice mismatch grown on GaAs, J. of Crystal Growth, 301–302, 2007, p. 152
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Shibasaki, I., Geka, H., Okamoto, A. (2008). Transport Properties of InAs0.1Sb0.9 Thin Films Sandwiched by Al0.1In0.9Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_22
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_22
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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