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Antimony Distribution in the InSb/InAs QD Heterostructures

  • A. N. Semenov
  • O. G. Lyublinskaya
  • B. Ya. Meltser
  • V. A. Solov’ev
  • L. V. Delendik
  • S. V. Ivanov
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

The influence of surface segregation of Sb atoms on Sb redistribution during the molecular beam epitaxy of InSb/InAs nanostructure was investigated. The segregation of Sb is responsible for the wetting layer in the InSb QD structures produced without intentional deposition of InSb, when the Stranski-Krastanow growth mode is impossible.

Keywords

Molecular Beam Epitaxy Surface Segregation Segregation Phenomenon Antimony Concentration InSb Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. N. Semenov
    • 1
  • O. G. Lyublinskaya
    • 1
  • B. Ya. Meltser
    • 1
  • V. A. Solov’ev
    • 1
  • L. V. Delendik
    • 2
  • S. V. Ivanov
    • 1
  1. 1.Ioffe Physico-Technical Institute RASRussia
  2. 2.Saint-Petersburg State Electro-Technical University “LETI”Russia

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