Antimony Distribution in the InSb/InAs QD Heterostructures
The influence of surface segregation of Sb atoms on Sb redistribution during the molecular beam epitaxy of InSb/InAs nanostructure was investigated. The segregation of Sb is responsible for the wetting layer in the InSb QD structures produced without intentional deposition of InSb, when the Stranski-Krastanow growth mode is impossible.
KeywordsMolecular Beam Epitaxy Surface Segregation Segregation Phenomenon Antimony Concentration InSb Layer
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