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L-Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots

  • S. I. Rybchenko
  • R. Gupta
  • I. E. Itskevich
  • S. K. Haywood
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

Effect of lattice-mismatch-induced strain on Γ-, X- and L-conduction-band edges in III–V self-assembled quantum dots has been calculated. The misfit strain is shown to strongly affect the band edges, leading to a possibility of Γ-L and Γ-X crossover. The Γ-L crossover is predicted for realistic self-assembled InSb/GaSb (001) dots, in which the lowest interband transition is from the L-valley state. Available experimental PL data were found to be in good agreement with the crossover phenomenon.

Keywords

Misfit Strain Crossover Phenomenon Hydrostatic Strain Hydrostatic Deformation Bulk GaSb 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • S. I. Rybchenko
    • 1
  • R. Gupta
    • 1
  • I. E. Itskevich
    • 1
  • S. K. Haywood
    • 1
  1. 1.Department of EngineeringUniversity of HullHullUK

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