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Photogalvanic Effects in HgTe Quantum Wells

  • B. Wittmann
  • S. N. Danilov
  • Z. D. Kwon
  • N. N. Mikhailov
  • S. A. Dvoretsky
  • R. Ravash
  • W. Prettl
  • S. D. Ganichev
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.

Keywords

Azimuth Angle Terahertz Radiation Polarization Dependence Photogalvanic Effect Inverted Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Ganichev, S.D. and Prettl, W.: Intense Terahertz Excitation of Semiconductors, Oxford University Press, 2006Google Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • B. Wittmann
    • 1
  • S. N. Danilov
    • 1
  • Z. D. Kwon
    • 2
  • N. N. Mikhailov
    • 2
  • S. A. Dvoretsky
    • 2
  • R. Ravash
    • 1
  • W. Prettl
    • 1
  • S. D. Ganichev
    • 1
  1. 1.Terahertz CenterUniversity of RegensburgGermany
  2. 2.Institute of Semiconductor PhysicsNovosibirskRussia

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