Epitaxial Growth and Characterization of PbGeEuTe Layers
The structural and electrical properties of Pb1−yGeyTe and Pb1−x−yGeyEuxTe (0≤y≤0.4 and x≤0.05) monocrystalline layers grown by molecular beam epitaxy technique on BaF2 (111) substrate were studied by X-ray diffraction, Hall effect, and electrical conductivity measurements. Based on the temperature dependence of the lattice parameter the structural (ferroelectric) transition temperature was found in the temperature range before 100 to 250 K in layers with varying Ge and Eu content. Electrical measurements indicates that incorporation of Eu ions in the PbGeTe crystal matrix decreases the electrical conductivity in p-type PbGeEuTe layers by 1–2 orders of magnitude.
KeywordsElectron Paramagnetic Resonance Rock Salt Epitaxial Growth Molecular Beam Epitaxy Technique Structural Transition Temperature
Unable to display preview. Download preview PDF.
- 1.Jantsch W., in Dynamical Properties of IV–VI Compounds, Vol. 99 of Springer Tracts in Modern Physics, Springer, Berlin, 1983Google Scholar