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Epitaxial Growth and Characterization of PbGeEuTe Layers

  • V. Osinniy
  • P. Dziawa
  • V. Domukhovski
  • K. Dybko
  • W. Knoff
  • T. Radzynski
  • A. Lusakowski
  • K. Swiatek
  • E. Lusakowska
  • B. Taliashvili
  • A. Boratynski
  • T. Story
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

The structural and electrical properties of Pb1−yGeyTe and Pb1−x−yGeyEuxTe (0≤y≤0.4 and x≤0.05) monocrystalline layers grown by molecular beam epitaxy technique on BaF2 (111) substrate were studied by X-ray diffraction, Hall effect, and electrical conductivity measurements. Based on the temperature dependence of the lattice parameter the structural (ferroelectric) transition temperature was found in the temperature range before 100 to 250 K in layers with varying Ge and Eu content. Electrical measurements indicates that incorporation of Eu ions in the PbGeTe crystal matrix decreases the electrical conductivity in p-type PbGeEuTe layers by 1–2 orders of magnitude.

Keywords

Electron Paramagnetic Resonance Rock Salt Epitaxial Growth Molecular Beam Epitaxy Technique Structural Transition Temperature 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Jantsch W., in Dynamical Properties of IV–VI Compounds, Vol. 99 of Springer Tracts in Modern Physics, Springer, Berlin, 1983Google Scholar
  2. 2.
    Bussman-Holder A., ‘Interplay of polarizability and ionicity in IV–VI compounds’, Phys. Rev. B, 40, 11639–45, 1989CrossRefADSGoogle Scholar
  3. 3.
    Ravel B., Cockayne E., Newville M.,. Rabe K.M, ‘Combined EXAFS and firstprinciples theory study of Pb1−xGexTe’, Phys. Rev. B, 60, 14632–42, 1999CrossRefADSGoogle Scholar
  4. 4.
    Katayama S., Murase K, ‘Role of local displacement of Ge ions on structural instability in Pb1−xGexTe’, Solid State Commun., 36, 707–711, 1980CrossRefADSGoogle Scholar
  5. 5.
    Bose D.N., Pal S., ‘A new semiconducting ferroelectric Ga1−xGexTe’, Materials Research Bulletin, Vol. 29, 111–118, 1994CrossRefGoogle Scholar
  6. 6.
    Akimov B.A., Albul A.V., Ivanchik I.I., Ryabova L.I., Slyn’ko E.I., Khokhlov D.R., ‘Influence of doping with gallium on the properties of Pb1−xGexTe solid solutions’, Semiconductors, 27, 194–196, 1993ADSGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • V. Osinniy
    • 1
  • P. Dziawa
    • 1
  • V. Domukhovski
    • 1
  • K. Dybko
    • 1
  • W. Knoff
    • 1
  • T. Radzynski
    • 1
  • A. Lusakowski
    • 1
  • K. Swiatek
    • 1
  • E. Lusakowska
    • 1
  • B. Taliashvili
    • 1
  • A. Boratynski
    • 1
  • T. Story
    • 1
  1. 1.Institute of PhysicsPolish Academy of SciencesWarsawPoland

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