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Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE

  • M. Yin
  • A. Krier
  • P. J. Carrington
  • R. Jones
  • S. E. Krier
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 μm with a threshold current density as low as 118 A/cm2 at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to ∼210 K in the optimized 5-layer structure.

Keywords

Liquid Phase Epitaxy Threshold Current Density Confinement Factor Free Space Optical Communication Undoped Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • M. Yin
    • 1
  • A. Krier
    • 1
  • P. J. Carrington
    • 1
  • R. Jones
    • 1
  • S. E. Krier
    • 1
  1. 1.Mid-Infrared Research GroupLancaster UniversityLancasterUK

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