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Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy

  • M. Yin
  • A. Krier
  • R. Jones
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We report on the liquid phase epitaxy (LPE) growth with the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.

Keywords

Quantum Well Liquid Phase Epitaxy Quantum Well Structure Electroluminescence Spectrum Strip Laser 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. i.
    M. Yin, A. Krier, P.J. Carrington, R. Jones, S.E. Krier, The Thirteenth International Conference on Narrow Gap Semiconductors, Guildford, UK, 2007Google Scholar
  2. ii.
    H. Mani, et al, Journal of Crystal Growth, 121, 463–472, 1992CrossRefADSGoogle Scholar
  3. iii.
    I. Vurgaftman, et al, Journal of Applied Physics, 89(11), 5852–5853, 2001CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • M. Yin
    • 1
  • A. Krier
    • 1
  • R. Jones
    • 1
  1. 1.Mid-Infrared Research GroupLancaster UniversityLancasterUK

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