Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy
We report on the liquid phase epitaxy (LPE) growth with the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro- luminescence characteristics of prototype DH & QW devices. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.
KeywordsQuantum Well Liquid Phase Epitaxy Quantum Well Structure Electroluminescence Spectrum Strip Laser
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- i.M. Yin, A. Krier, P.J. Carrington, R. Jones, S.E. Krier, The Thirteenth International Conference on Narrow Gap Semiconductors, Guildford, UK, 2007Google Scholar