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InMnAs Quantum Dots: A Raman Spectroscopy Analysis

  • A. D. Rodrigues
  • J. C. Galzerani
  • E. MaregaJr.
  • L. N. Coelho
  • R. Magalhães-Paniago
  • G. J. Salamo
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

In1−xMnxAs quantum dots grown on [100] GaAs substrates at different temperatures and with different Mn concentrations were studied. The substitutional Mn incorporation to the InAs lattice and the conditions for obtaining coherent and non-relaxed structures are here discussed from the comparison between Raman spectroscopy and X-rays analysis.

Keywords

Raman Spectroscopy GaAs Substrate Longitudinal Optical Indium Diffusion Raman Selection Rule 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Chen, Y. F., Lee, W. N., Huang, J. H., Chin, T. S., Huang, R. T., Chen, F. R., Kai, J. J., Aravind, K., Lin, I. N. and Ku, H. C., J. Vac. Sci. Technol. B 23(4), 1376, 2005CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. D. Rodrigues
    • 1
  • J. C. Galzerani
    • 1
  • E. MaregaJr.
    • 2
  • L. N. Coelho
    • 3
    • 4
  • R. Magalhães-Paniago
    • 3
    • 4
  • G. J. Salamo
    • 5
  1. 1.Departamento de FísicaUFSCarSão CarlosBrazil
  2. 2.IFSCUniversidade de São PauloSão CarlosBrazil
  3. 3.LNLSCampinasBrazil
  4. 4.Departamento de FísicaUFMGBelo HorizonteBrazil
  5. 5.Dept. Phys.University of ArkansasFayettevilleUSA

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