Abstract
In1−xMnxAs quantum dots grown on [100] GaAs substrates at different temperatures and with different Mn concentrations were studied. The substitutional Mn incorporation to the InAs lattice and the conditions for obtaining coherent and non-relaxed structures are here discussed from the comparison between Raman spectroscopy and X-rays analysis.
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Chen, Y. F., Lee, W. N., Huang, J. H., Chin, T. S., Huang, R. T., Chen, F. R., Kai, J. J., Aravind, K., Lin, I. N. and Ku, H. C., J. Vac. Sci. Technol. B 23(4), 1376, 2005
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Rodrigues, A.D., Galzerani, J.C., Marega, E., Coelho, L.N., Magalhães-Paniago, R., Salamo, G.J. (2008). InMnAs Quantum Dots: A Raman Spectroscopy Analysis. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_14
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DOI: https://doi.org/10.1007/978-1-4020-8425-6_14
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-8424-9
Online ISBN: 978-1-4020-8425-6
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