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InMnAs Quantum Dots: A Raman Spectroscopy Analysis

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Narrow Gap Semiconductors 2007

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 119))

Abstract

In1−xMnxAs quantum dots grown on [100] GaAs substrates at different temperatures and with different Mn concentrations were studied. The substitutional Mn incorporation to the InAs lattice and the conditions for obtaining coherent and non-relaxed structures are here discussed from the comparison between Raman spectroscopy and X-rays analysis.

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References

  1. Chen, Y. F., Lee, W. N., Huang, J. H., Chin, T. S., Huang, R. T., Chen, F. R., Kai, J. J., Aravind, K., Lin, I. N. and Ku, H. C., J. Vac. Sci. Technol. B 23(4), 1376, 2005

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Rodrigues, A.D., Galzerani, J.C., Marega, E., Coelho, L.N., Magalhães-Paniago, R., Salamo, G.J. (2008). InMnAs Quantum Dots: A Raman Spectroscopy Analysis. In: Murdin, B., Clowes, S. (eds) Narrow Gap Semiconductors 2007. Springer Proceedings in Physics, vol 119. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-8425-6_14

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