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Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution

  • A. V. Dmitriev
  • A. B. Evlyukhin
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

This work is devoted to the theoretical study and computational modelling of hot electron transport and interband breakdown in a semiconductor with the Kane band dispersion law and highly degenerate hole distribution. This is an unusual system where the ionization threshold is electric field dependent because the ionization in it takes place from the hole Fermi level which itself changes during the breakdown process. We found that a specific mechanism of S-type negative differential conductivity formation may take place in this material under breakdown conditions. The predicted current instability is connected with the entirely Coulomb electron scattering by heavy holes.

Keywords

Heavy Hole Passive Region Ionization Threshold Electron Distribution Function Breakdown Condition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. V. Dmitriev
    • 1
  • A. B. Evlyukhin
    • 2
  1. 1.Department of Low Temperature PhysicsMoscow State UniversityRussia
  2. 2.Department of Physics and Applied MathematicsVladimir State UniversityRussia

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