Band Structure of InSbN and GaSbN
We use a tight-binding Hamiltonian to investigate the variation of energy gap with nitrogen (N) composition in InSbN and GaSbN, including the effect on the energy gap due to a random configuration of N atoms. We find that the assumed distribution of N atoms does not significantly affect the calculated energy gap in InSbN. By contrast, the electronic properties of GaSbN are strongly dependent on the assumed N distribution, with N-related defect levels strongly perturbing the lowest conduction band states and energy gap.
KeywordsBand Structure Conduction Band Edge Conduction Band Minimum Band Dispersion Random Alloy
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- 1.For a review, see “Physics and Applications of Dilute Nitride”, ed. I. A. Buyanova and W. M. Chen (Taylor & Francis, New York, 2004)Google Scholar