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Band Structure of InSbN and GaSbN

  • A. Lindsay
  • A. D. Andreev
  • E. P. O’Reilly
  • T. Ashley
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

We use a tight-binding Hamiltonian to investigate the variation of energy gap with nitrogen (N) composition in InSbN and GaSbN, including the effect on the energy gap due to a random configuration of N atoms. We find that the assumed distribution of N atoms does not significantly affect the calculated energy gap in InSbN. By contrast, the electronic properties of GaSbN are strongly dependent on the assumed N distribution, with N-related defect levels strongly perturbing the lowest conduction band states and energy gap.

Keywords

Band Structure Conduction Band Edge Conduction Band Minimum Band Dispersion Random Alloy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. Lindsay
    • 1
  • A. D. Andreev
    • 2
  • E. P. O’Reilly
    • 1
  • T. Ashley
    • 3
  1. 1.Tyndall National InstituteCorkIreland
  2. 2.Advanced Technology InstituteUniversity of SurreyGuildfordUK
  3. 3.MalvernUK

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