Band Structure of InSbN and GaSbN

  • A. Lindsay
  • A. D. Andreev
  • E. P. O’Reilly
  • T. Ashley
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)


We use a tight-binding Hamiltonian to investigate the variation of energy gap with nitrogen (N) composition in InSbN and GaSbN, including the effect on the energy gap due to a random configuration of N atoms. We find that the assumed distribution of N atoms does not significantly affect the calculated energy gap in InSbN. By contrast, the electronic properties of GaSbN are strongly dependent on the assumed N distribution, with N-related defect levels strongly perturbing the lowest conduction band states and energy gap.


Band Structure Conduction Band Edge Conduction Band Minimum Band Dispersion Random Alloy 
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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • A. Lindsay
    • 1
  • A. D. Andreev
    • 2
  • E. P. O’Reilly
    • 1
  • T. Ashley
    • 3
  1. 1.Tyndall National InstituteCorkIreland
  2. 2.Advanced Technology InstituteUniversity of SurreyGuildfordUK
  3. 3.MalvernUK

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