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Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses

  • R. Adomavičius
  • R. Šustavičiūtė
  • A. Krotkus
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

In the present contribution, THz pulses were used for investigating carrier dynamics in the narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided with important insights on the electron energy relaxation in the conduction band. In the second set of experiments THz generation from the surfaces of various semiconductors have been studied and compared. A substantial increase of the emitted THz power from CdHgTe surface was observed after lowering the sample temperature from 300K to 80K.

Keywords

Femtosecond Laser Pulse Optical Pump Grown GaAs Terahertz Emission Photovoltage Transient 
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References

  1. 1.
    Krotkus, A, Adomavičius, R, Malevich, V.L.: ‘Terahertz emission from semiconductor surfaces illuminated by femtosecond laser pulses’, Proc. of SPIE Vol. 6257, 62570N 1–12, 2005Google Scholar
  2. 2.
    Beard, M. C., Turner, G. M., Schmuttenmaer, C. A. : ‘Sub-picosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved THz spectroscopy’ J. Appl. Phys., 90, 5915–5923, 2001CrossRefADSGoogle Scholar
  3. 3.
    Adomavičius, R, Molis, G, Krotkus, A, Sirutkaitis, V.: ‘Spectral dependencies of terahertz emission fro InAs and InSb’, App. Phys. Lett., 87, 261101 1–3, 2005Google Scholar

Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • R. Adomavičius
    • 1
  • R. Šustavičiūtė
    • 1
  • A. Krotkus
    • 1
  1. 1.Semiconductor Physics InstituteVilniusLithuania

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