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Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well

  • W. R. Branford
  • A. M. Gilbertson
  • P. D. Buckle
  • L. Buckle
  • T. Ashley
  • F. Magnus
  • S. K. Clowes
  • J. J. Harris
  • L. F. Cohen
Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Abstract

A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-resolved Shubnikov-de Haas oscillations are observed. A preliminary analysis of the Shubnikov-de Haas oscillations indicates a strong gate bias dependence of the Rashba spin-orbit term.

Keywords

Physical Review Letter Gate Bias Inversion Asymmetry Gate Dependence Rashba Term 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media B.V 2008

Authors and Affiliations

  • W. R. Branford
    • 1
  • A. M. Gilbertson
    • 1
    • 2
  • P. D. Buckle
    • 2
  • L. Buckle
    • 2
  • T. Ashley
    • 2
  • F. Magnus
    • 1
  • S. K. Clowes
    • 1
  • J. J. Harris
    • 1
  • L. F. Cohen
    • 1
  1. 1.Blackett LaboratoryImperial College LondonLondonUK
  2. 2.QinetiQMalvernUK

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