Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well
A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-resolved Shubnikov-de Haas oscillations are observed. A preliminary analysis of the Shubnikov-de Haas oscillations indicates a strong gate bias dependence of the Rashba spin-orbit term.
KeywordsPhysical Review Letter Gate Bias Inversion Asymmetry Gate Dependence Rashba Term
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