Emitter followers are frequently used to obtain the highest possible speed of bipolar circuits for high bit-rate applications. For example, double emitter-coupled logic (EECL) is usually faster than emitter-coupled logic (ECL). The maximum bit-rate of the cross-connect switch described in Chapter 4 can be increased by employing double emitter followers in the RF signal path. However, to be able to do so, the supply voltage must be increased to a value above the collector-emitter breakdown voltage (BVCEO) of the high-speed transistors of the technology.
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References
G. Freeman, M. Meghelli, et al., “40-Gb/s circuits built from a 120-GHz fT SiGe technology,” IEEE J. Solid-State Circuits, vol. 37, No. 9, September 2002, pp. 1106-1114.
E.O. Johnson, “Physical limitations on frequency and power parameters of transistors,” RCA Rev., vol. 26, p. 163, 1965.
K.K. Ng, M.R. Frei, C.A. King, “Reevaluation of the ftBVceo limit on Si bipolar transistors,” IEEE Trans. Electron Devices, vol. 45, No. 8, August 1998, pp. 1854-1855.
A. Pruijmboom, D. Szmyd, R. Brock, R. Wall, N. Morris, K. Fong, F. Jovenin, “QUBiC3: a 0.5 µm BiCMOS production technology, with fT = 30GHz, fmax = 60GHz and high-quality passive components for wireless telecommunication applications,” in Proc. IEEE BCTM, 1998, pp. 120-123.
D. Szmyd, R. Brock, N. Bell, S. Harker, G. Patrizi, J. Fraser, R. Dondero, “QUBiC4: a silicon-RF BiCMOS technology for wireless communication ICs,” in Proc. IEEE BCTM, 2001, pp. 60-63.
P. Deixler, R. Colclaser, et al., “QUBiC4G: a fT /fmax = 70/100GHz 0.25um low power SiGe-BiCMOS production technology with high quality passives for 12.5Gb/s optical networking and emerging wireless applications up to 20GHz,” in Proc. IEEE BCTM, 2002, pp. 201-204.
P. Deixler, A. Rodriguez, et al., “QUBiC4X: An fT /fmax = 130/140GHz SiGe:C-BiCMOS manufacturing technology with elite passives for emerging microwave applications,” in Proc. IEEE BCTM, 2004, pp. 233-236.
S.M. Sze, Semiconductor devices, physics and technology, Section 4.2: Static Characteristics of Bipolar Transistors, Wiley, New York, 1985.
H.C. de Graaff, W.J. Kloosterman, “The MEXTRAM bipolar transistor model,” Philips Re-search Unclassified Report NL-UR 006/94, Eindhoven, 1994.
J.C.J. Paasschens, W.J. Kloosterman, and R. v.d. Toorn, “Model derivation of mextram 504, the physics behind the model,” Philips Research Unclassified Report NL-UR 2002/806, Eindhoven, 2002.
P.F. Lu, T. Chen, “Collector-base junction avalanche effects in advanced double-poly self- aligned bipolar transistors,” IEEE Trans. Electron Devices, vol.36, No. 6, June 1989, pp. 1182-1188.
P.R. Gray, P.J. Hurst, S.H. Lewis, R.G. Meyer, Analyses and design of analog integrated cir-cuits, 4th edn., Section 4.2.2, Wiley, New York, 2001, pp. 255-257.
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(2008). Bias Circuits Tolerating Output Voltages Above BVCEO . In: Circuit and Interconnect Design for RF and High Bit-Rate Applications. Analog Circuits And Signal Processing Series. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-6884-3_5
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