The performance constraints of transistors define fundamental circuit limitations. For example, by relating circuit performance to widely accepted technology parameters one can predict the impact of a new technology on applications. This chapter reviews device metrics that will be used for circuit design in the rest of this book. The metric that is most widely used for the evaluation of an IC process is f T, representing the transition frequency or unity current gain bandwidth of the transistors. The f T can be used to estimate the gain-bandwidth product of a basic amplifier circuit as shown in Fig. 3.1a.

In this chapter, definitions and comparisons focus on bipolar npn transistors. The results are applicable to widely used bipolar IC processes such as Si, SiGe, SiGe:C, GaAs HBT and InP HBT. Since the focus of this book is on high bit-rate and (mainly) large-signal circuits, noise and distortion of transistors are not analysed.


Power Gain Base Resistance Current Gain Differential Pair Substrate Network 
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