THE previous chapter has proved the principle of stacking devices for designing high voltage circuits in mainstream nanometer CMOS technologies by practical implementations. Until now, only stand-alone high voltage buffers were designed, implemented and measured. To prove the usefulness of this technique, such a high voltage buffer has to be integrated in circuits for high-end applications, like xDSL. Therefore, two test chips were designed in a mainstream 130 nm CMOS technology.
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© 2008 Springer Science + Business Media B.V
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(2008). High Voltage Line Driver Realisations. In: Serneels, B., Steyaert, M. (eds) Design of High Voltage xDSL Line Drivers in Standard CMOS. Analog Circuits and Signal Processing Series. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-6790-7_6
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DOI: https://doi.org/10.1007/978-1-4020-6790-7_6
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-6789-1
Online ISBN: 978-1-4020-6790-7
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