Recent research and development of silicon single-electron transistors are reviewed. The fabrication process of extremely small silicon dot in the channel of MOS transistors has been advanced, and the dot size is now as small as 2 nm. Consequently, the single-electron transistors operate at room temperature and the peak-to-valley current ratio of the Coulomb blockade oscillations reaches as high as 480 at room temperature. The attempts to integrate the single-electron transistors and to develop new circuit applications are also described.
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Hiramoto, T. (2007). Integration of silicon Single-Electron Transistors Operating at Room Temperature. In: Hall, S., Nazarov, A.N., Lysenko, V.S. (eds) Nanoscaled Semiconductor-on-Insulator Structures and Devices. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-6380-0_7
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DOI: https://doi.org/10.1007/978-1-4020-6380-0_7
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-6378-7
Online ISBN: 978-1-4020-6380-0
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