All Quantum Simulation of Ultrathin SOI MOSFETs

The procedure for all-quantum 3D simulation of a nanometer scale silicon-on-insulator MOSFET is proposed. It is based on the Büttiker- Landauer approach realized via a self-consistent solution of the Schrödinger and Poisson equations. The stabilization of the numerical solution of the Schrödinger equation is achieved by a finite wave-guide mode presentation of a wave function. We also propose a method to avoid the need for numerical solution of Schrödinger equation for most of the particles (waves) moving from contacts CHECK but those which surmount the selfconsistent barrier and contribute to current. This approach brings greater speed of the simulation program.