MuGFET CMOS Process with Midgap Gate Material
An increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).
KeywordsThreshold Voltage Gate Voltage Metal Gate Effective Work Function Accumulation Threshold
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