Advertisement

MuGFET CMOS Process with Midgap Gate Material

  • W. Xiong
  • C. R. Cleavelin
  • T. Schulz
  • K. Schrüfer
  • P. Patruno
  • Jean-Pierre Colinge
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

An increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).

Keywords

Threshold Voltage Gate Voltage Metal Gate Effective Work Function Accumulation Threshold 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer 2007

Authors and Affiliations

  • W. Xiong
    • 1
  • C. R. Cleavelin
    • 1
  • T. Schulz
    • 2
  • K. Schrüfer
    • 2
  • P. Patruno
    • 3
  • Jean-Pierre Colinge
    • 4
  1. 1.SiTDTexas Instruments IncorporatedDallasUSA
  2. 2.Infineon TechnologiesGermany
  3. 3.Soitec S.AParc Technologique des FontainesFrance
  4. 4.Dept. of Electrical and Computer EngineeringUniv. of CaliforniaDavisUSA

Personalised recommendations