MuGFET CMOS Process with Midgap Gate Material

  • W. Xiong
  • C. R. Cleavelin
  • T. Schulz
  • K. Schrüfer
  • P. Patruno
  • Jean-Pierre Colinge
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

An increase in threshold voltage is observed in ultra-thin body MuGFET (multi-gate FET) devices. The threshold increase is due to of lack of carriers at the classical threshold definition. A sufficient amount of carrier build-up requires additional gate voltage (0.12V in our experiment).

Keywords

Boron 

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Copyright information

© Springer 2007

Authors and Affiliations

  • W. Xiong
    • 1
  • C. R. Cleavelin
    • 1
  • T. Schulz
    • 2
  • K. Schrüfer
    • 2
  • P. Patruno
    • 3
  • Jean-Pierre Colinge
    • 4
  1. 1.SiTDTexas Instruments IncorporatedDallasUSA
  2. 2.Infineon TechnologiesGermany
  3. 3.Soitec S.AParc Technologique des FontainesFrance
  4. 4.Dept. of Electrical and Computer EngineeringUniv. of CaliforniaDavisUSA

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