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SPIN-ORBITAL ORDERING AND GIANT MAGNETORESISTANCE IN COBALT OXIDES: INTRINSIC MAGNETIC-FIELD-EFFECT TRANSISTOR

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Electron Correlation in New Materials and Nanosystems

Part of the book series: NATO Science Series ((NAII,volume 241))

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Abstract

Layered cobalt oxides RBaCo2O5+x (R is a rare-earth element) possess very rich phase diagrams owing to the competition of various spin-charge-orbital ordered states in the doped square-lattice CoO2 planes. To clarify the mechanism of the giant magnetoresistance (GMR) that accompanies magnetic transformations in these compounds we have prepared and studied GdBaCo2O5+x single crystals with precisely tuned doping levels. We .nd that the GMR is observed even in the parent composition (x = 0.50) with all cobalt ions in the Co3+ state, which has neither phase segregation nor charge ordering that are responsible for the MR in manganites. A new MR mechanism is suggested for these cobalt oxides where the charge carrier generation in conducting channels is controlled by the magnetic state of their local environment.

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Lavrov, A.N., Taskin, A.A., Ando, Y. (2007). SPIN-ORBITAL ORDERING AND GIANT MAGNETORESISTANCE IN COBALT OXIDES: INTRINSIC MAGNETIC-FIELD-EFFECT TRANSISTOR. In: Scharnberg, K., Kruchinin, S. (eds) Electron Correlation in New Materials and Nanosystems. NATO Science Series, vol 241. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-5659-8_30

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