Abstract
We report transport properties of C60 thin film field-effect transistors (FETs) with a channel length of several-ten nanometers. Nonlinear drain current ID versus source-drain voltage VDS characteristics were observed at room temperature. We discuss this phenomenon in terms of the crossover from a diffusive conductance in bulk regime to a coherent one in the nanometer scale.
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Fujiwara, A., Matsuoka, Y., Inami, N., Shikoh, E. (2007). TRANSPORT PROPERTIES OF FULLERENE NANODEVICES. In: Scharnberg, K., Kruchinin, S. (eds) Electron Correlation in New Materials and Nanosystems. NATO Science Series, vol 241. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-5659-8_1
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DOI: https://doi.org/10.1007/978-1-4020-5659-8_1
Publisher Name: Springer, Dordrecht
Print ISBN: 978-1-4020-5657-4
Online ISBN: 978-1-4020-5659-8
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