Skip to main content

Test Facilities for SEE and Dose Testing

  • Chapter
Radiation Effects on Embedded Systems

Abstract

This chapter addresses the field of testing and characterizing the response of electronic devices to radiation exposure. Firstly, a brief overview of the critical parameters that influences the devices degradation or malfunction will be given in order to show how the standards and guidelines deal with them. Then, the most widely used facilities will be described (particle accelerators, radioactive source…) and their domain of application defined.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. David J.P.: Total Dose Effects on Devices and Circuits, Space Technology Course (SREC04, June 2004), p.199.

    Google Scholar 

  2. Duzellier S.: Single Event Effects: analysis and testing, Space Technology Course (SREC04, June 2004), p.221.

    Google Scholar 

  3. Stapor W.J.: Single Event Effects Qualification, IEEE nuclear and space radiation effects conference, short course, section II, 1995.

    Google Scholar 

  4. Titus J.L. et al: Experimental study of Single Event Gate Rupture and Burnout in vertical Power MOSFETs, IEEE Trans. Nuc. Sci., NS-43, no. 2, p. 533, 1996.

    Google Scholar 

  5. Marshall S.: Proton effects and test issues for satellite designers: part B. displacement effects, IEEE nuclear and space radiation effects conference, short course, section III, 1999.

    Google Scholar 

  6. Johnston A.: Photonics Devices with Complex and Multiple Failure Modes, IEEE nuclear and space radiation effects conference, short course, section III, 2000.

    Google Scholar 

  7. Hopkinson G.: Radiation Engineering Methods for Space Applications: Displacement Damage - Component Characterisation and Testing, Radiation Effects and Analysis, Radecs conference, short course, 2003.

    Google Scholar 

  8. Schwank J. R.: Total-Dose Effects in MOS Devices, IEEE NSREC Short Cource, Section III, 2002.

    Google Scholar 

  9. Ma T.P., Dressendorfer P.V.: Ionizing Radiation Effects in MOS Devices and Circuits, Wiley-Interscience, 1983.

    Google Scholar 

  10. Johnston A.H., Swift G.M., and Rax B.G.: Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits, IEEE Trans. Nucl. Sci. vol 41, no. 6, pp 2427–2436, Dec. 1994.

    Article  Google Scholar 

  11. Duzellier S. et al.: SEE Results using High Energy Ions, IEEE Trans. Nuc. Sci., NS-42, no. 6, p. 1797, Dec. 1995.

    Article  Google Scholar 

  12. Dodd P.E. et al.: Impact of Ion Energy on Single-Event Upset, IEEE Trans. Nuc. Sci., NS-45, no. 6, p. 2483, Dec. 1998.

    Article  Google Scholar 

  13. Ziegler J.F., Biersack J.P., Littmark U.: The stopping and range of Ions in solids. Volume 1 of “stopping and range of ions in matter”, Pergamon Press (New-York).

    Google Scholar 

  14. Petersen E.: Single Event analysis and prediction, IEEE nuclear and space radiation effects conference, short course, section III, 1997.

    Google Scholar 

  15. Adams Jr. J. H.: Cosmic ray effects on microelectronics, Part IV, NRL memorandum report 5901, 1986.

    Google Scholar 

  16. Pickel J. C., Blandford J. T.: Cosmic ray induced errors in MOS devices, IEEE Trans. Nuc. Sci., NS-27, no. 2, 1006, 1980.

    Article  Google Scholar 

  17. Garth J.C., Burke E.A., Woolf S.: The Role of Scattered Radiation in the Dosimetry of Small Device Structures, IEEE Trans. Nucl. Sci. vol 27, no. 6, pp 1459–1464, Dec. 1980.

    Google Scholar 

  18. Duzellier S. et al: Application of Laser Testing In Study of SEE Mechanisms In 16-Mbit Drams, IEEE Trans. Nucl. Sci., NS-47, no. 6, December 2000.

    Google Scholar 

  19. Makihara A. et al: Analysis of Single-Ion Multiple-Bit Upset in High-Density DRAMs, IEEE Trans. Nucl. Sci., NS-47, no. 6, December 2000.

    Google Scholar 

  20. John J. Livingood, “Principle of Cyclic Particle Accelerators”, D. Van Nostrand Company Inc.

    Google Scholar 

  21. JEDEC standard “Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices”, JESD89 August 2001

    Google Scholar 

  22. G. Berger, G. Ryckewaert, R. Harboe-Sorensen, L. Adams “The Heavy Ion Irradiation Facility at CYCLONE - a dedicated SEE beam line” 1996 IEEE NSREC Workshop.

    Google Scholar 

  23. A. Bol, P. Leleux, P. Lipnik, P. Macq, A. Ninane “A Novel Design for a fast intense neutron beam” NIM 214 (1983) 169.

    Article  Google Scholar 

  24. I. Slypen, V. Corcalciuc, A. Ninane, J.P. Meulders “Charged particles produced in fast neutron induced reactions on 12C in the 48–80 MeV energy range” NIM A 337(1994)431–440.

    Article  Google Scholar 

  25. C. Dupont, “Mesures de Sections Efficaces Différentielles du Bremsstrahlung Neutron- Proton à 76.5 MeV”, UCL PhD Thesis 1987.

    Google Scholar 

  26. H. Shuhmacher, H.J. Brede, V. Dangendorf, M. Kuhfuss, J.-P. Meulders, W.D. Newhauser, R. Nolte and U.J. Schrewe, “Quasi-Monoenergetic Référence Neutron Beams With Energies From 25 MeV To 70 MeV”, International Conference on Nuclear Data for Science and Technology, Trieste, May 1997.

    Google Scholar 

  27. M. Lambert, S. Benck, I. Slypen, J.-P. Meulders and V. Corcalciuc, “Comparison of Fast Neutron Induced Light Charged Particle Production Cross Sections for Si and Al”, International Conference on Nuclear Data for Science and Technology, Trieste May 1997

    Google Scholar 

  28. F. Bezerra and G. Berger, “Heavy Ion Micro-Beam Study”, RADECS Thematic Workshop on European Accelerators, Jyvaskyla May 2005.

    Google Scholar 

  29. D. McMorrow et al., “Application of a Pulsed Laser for Evaluation and Optimization of SEU-Hard Designs”, IEEE Transactions on Nuclear Science, Vol. 47, pp. 559–563 (2000).

    Article  Google Scholar 

  30. J. S. Melinger, et al., “Pulsed Laser-Induced Single Event Upset and Charge Collection Measurements as a Function of Optical Penetration Depth”, Journal of Applied Physics, Vol. 84, pp. 690–703 (1998).

    Article  Google Scholar 

  31. G. C. Messenger and M. S. Ash, Single Event Phenomena (Chapman-Hall, New York, 1997).

    Google Scholar 

  32. T. F. Miyahira, A. H. Johnston, H. N. Becker, S. D. LaLumondiere, and S. C. Moss, “Catastrophic Latchup in CMOS Analog-to-Digital Converters”, IEEE Transactions on Nuclear Science, Vol. 48, pp. 1833–1840 (2001).

    Article  Google Scholar 

  33. H. A. Rijken, S. S. Klein, W. Jacobs, L. J. H. G. W. Teeuwen and M. J. A. de VoigtP. Burger “Subnanosecond timing with ion implanted detectors”. NIM B64 (1992) 272–276.

    Article  Google Scholar 

  34. E. Steinbauer, P. Bauer, M. Geretschläger, G. Bortels, J. P. Biersack and P. Burger “Energy resolution of Silicon detectors: approaching the physical limit”. NIM B85 (1994) 642–649.

    Article  Google Scholar 

  35. Glenn Knoll, Radiation Detection and Measurement, 3rd Edition, 2000.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2007 Springer

About this chapter

Cite this chapter

Duzellier, S., Berger, G. (2007). Test Facilities for SEE and Dose Testing. In: VELAZCO, R., FOUILLAT, P., REIS, R. (eds) Radiation Effects on Embedded Systems. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-5646-8_10

Download citation

  • DOI: https://doi.org/10.1007/978-1-4020-5646-8_10

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-5645-1

  • Online ISBN: 978-1-4020-5646-8

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics