Abstract
This chapter addresses the field of testing and characterizing the response of electronic devices to radiation exposure. Firstly, a brief overview of the critical parameters that influences the devices degradation or malfunction will be given in order to show how the standards and guidelines deal with them. Then, the most widely used facilities will be described (particle accelerators, radioactive source…) and their domain of application defined.
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References
David J.P.: Total Dose Effects on Devices and Circuits, Space Technology Course (SREC04, June 2004), p.199.
Duzellier S.: Single Event Effects: analysis and testing, Space Technology Course (SREC04, June 2004), p.221.
Stapor W.J.: Single Event Effects Qualification, IEEE nuclear and space radiation effects conference, short course, section II, 1995.
Titus J.L. et al: Experimental study of Single Event Gate Rupture and Burnout in vertical Power MOSFETs, IEEE Trans. Nuc. Sci., NS-43, no. 2, p. 533, 1996.
Marshall S.: Proton effects and test issues for satellite designers: part B. displacement effects, IEEE nuclear and space radiation effects conference, short course, section III, 1999.
Johnston A.: Photonics Devices with Complex and Multiple Failure Modes, IEEE nuclear and space radiation effects conference, short course, section III, 2000.
Hopkinson G.: Radiation Engineering Methods for Space Applications: Displacement Damage - Component Characterisation and Testing, Radiation Effects and Analysis, Radecs conference, short course, 2003.
Schwank J. R.: Total-Dose Effects in MOS Devices, IEEE NSREC Short Cource, Section III, 2002.
Ma T.P., Dressendorfer P.V.: Ionizing Radiation Effects in MOS Devices and Circuits, Wiley-Interscience, 1983.
Johnston A.H., Swift G.M., and Rax B.G.: Total Dose Effects in Conventional Bipolar Transistors and Linear Integrated Circuits, IEEE Trans. Nucl. Sci. vol 41, no. 6, pp 2427–2436, Dec. 1994.
Duzellier S. et al.: SEE Results using High Energy Ions, IEEE Trans. Nuc. Sci., NS-42, no. 6, p. 1797, Dec. 1995.
Dodd P.E. et al.: Impact of Ion Energy on Single-Event Upset, IEEE Trans. Nuc. Sci., NS-45, no. 6, p. 2483, Dec. 1998.
Ziegler J.F., Biersack J.P., Littmark U.: The stopping and range of Ions in solids. Volume 1 of “stopping and range of ions in matter”, Pergamon Press (New-York).
Petersen E.: Single Event analysis and prediction, IEEE nuclear and space radiation effects conference, short course, section III, 1997.
Adams Jr. J. H.: Cosmic ray effects on microelectronics, Part IV, NRL memorandum report 5901, 1986.
Pickel J. C., Blandford J. T.: Cosmic ray induced errors in MOS devices, IEEE Trans. Nuc. Sci., NS-27, no. 2, 1006, 1980.
Garth J.C., Burke E.A., Woolf S.: The Role of Scattered Radiation in the Dosimetry of Small Device Structures, IEEE Trans. Nucl. Sci. vol 27, no. 6, pp 1459–1464, Dec. 1980.
Duzellier S. et al: Application of Laser Testing In Study of SEE Mechanisms In 16-Mbit Drams, IEEE Trans. Nucl. Sci., NS-47, no. 6, December 2000.
Makihara A. et al: Analysis of Single-Ion Multiple-Bit Upset in High-Density DRAMs, IEEE Trans. Nucl. Sci., NS-47, no. 6, December 2000.
John J. Livingood, “Principle of Cyclic Particle Accelerators”, D. Van Nostrand Company Inc.
JEDEC standard “Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices”, JESD89 August 2001
G. Berger, G. Ryckewaert, R. Harboe-Sorensen, L. Adams “The Heavy Ion Irradiation Facility at CYCLONE - a dedicated SEE beam line” 1996 IEEE NSREC Workshop.
A. Bol, P. Leleux, P. Lipnik, P. Macq, A. Ninane “A Novel Design for a fast intense neutron beam” NIM 214 (1983) 169.
I. Slypen, V. Corcalciuc, A. Ninane, J.P. Meulders “Charged particles produced in fast neutron induced reactions on 12C in the 48–80 MeV energy range” NIM A 337(1994)431–440.
C. Dupont, “Mesures de Sections Efficaces Différentielles du Bremsstrahlung Neutron- Proton à 76.5 MeV”, UCL PhD Thesis 1987.
H. Shuhmacher, H.J. Brede, V. Dangendorf, M. Kuhfuss, J.-P. Meulders, W.D. Newhauser, R. Nolte and U.J. Schrewe, “Quasi-Monoenergetic Référence Neutron Beams With Energies From 25 MeV To 70 MeV”, International Conference on Nuclear Data for Science and Technology, Trieste, May 1997.
M. Lambert, S. Benck, I. Slypen, J.-P. Meulders and V. Corcalciuc, “Comparison of Fast Neutron Induced Light Charged Particle Production Cross Sections for Si and Al”, International Conference on Nuclear Data for Science and Technology, Trieste May 1997
F. Bezerra and G. Berger, “Heavy Ion Micro-Beam Study”, RADECS Thematic Workshop on European Accelerators, Jyvaskyla May 2005.
D. McMorrow et al., “Application of a Pulsed Laser for Evaluation and Optimization of SEU-Hard Designs”, IEEE Transactions on Nuclear Science, Vol. 47, pp. 559–563 (2000).
J. S. Melinger, et al., “Pulsed Laser-Induced Single Event Upset and Charge Collection Measurements as a Function of Optical Penetration Depth”, Journal of Applied Physics, Vol. 84, pp. 690–703 (1998).
G. C. Messenger and M. S. Ash, Single Event Phenomena (Chapman-Hall, New York, 1997).
T. F. Miyahira, A. H. Johnston, H. N. Becker, S. D. LaLumondiere, and S. C. Moss, “Catastrophic Latchup in CMOS Analog-to-Digital Converters”, IEEE Transactions on Nuclear Science, Vol. 48, pp. 1833–1840 (2001).
H. A. Rijken, S. S. Klein, W. Jacobs, L. J. H. G. W. Teeuwen and M. J. A. de VoigtP. Burger “Subnanosecond timing with ion implanted detectors”. NIM B64 (1992) 272–276.
E. Steinbauer, P. Bauer, M. Geretschläger, G. Bortels, J. P. Biersack and P. Burger “Energy resolution of Silicon detectors: approaching the physical limit”. NIM B85 (1994) 642–649.
Glenn Knoll, Radiation Detection and Measurement, 3rd Edition, 2000.
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Duzellier, S., Berger, G. (2007). Test Facilities for SEE and Dose Testing. In: VELAZCO, R., FOUILLAT, P., REIS, R. (eds) Radiation Effects on Embedded Systems. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-5646-8_10
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DOI: https://doi.org/10.1007/978-1-4020-5646-8_10
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