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A Si/CdTe Compton Camera for gamma-ray lens experiment

  • Tadayuki Takahashi

Abstract

Cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) have been regarded as promising semiconductor materials for hard X-ray and γ-ray detection. However, a considerable amount of charge loss in these detectors results in a reduced energy resolution. We have achieved a significant improvement in the spectral properties by forming the Schottky junction on the Te side of the CdTe wafer. With the further reduction of leakage current by an adoption of guard ring structure, we have demonstrated a CdTe pixel detector with high energy resolution and full charge collection capabilty. The detector has a pixel size of a few mm and a thickness of 0.5 – 1 mm. We apply this high resolution detector to a new silicon and CdTe Compton Camera which features high angular resolution. We also describe a concept of the stack detector which consists of many thin CdTe layers and provides sufficient efficiency for hard X-rays and gamma-rays up to several hundred keV maintaining good energy resolution. A narrow-FOV Compton telescope can be realized by installing a Si/CdTe Compton Camera inside the deep well of an active shield. This configuration is very suitable as focal plane detector for future focusing gamma-ray missions.

Keywords

Gamma-ray astronomy Compton telescope CZT CdTe Narrow FOV Compton telescope CdTe diode 

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Copyright information

© Springer 2006

Authors and Affiliations

  • Tadayuki Takahashi
    • 1
    • 2
  1. 1.The Institute of Space and Astronautical ScienceJAXASagamihara, KanagawaJapan
  2. 2.University of TokyoTokyoJapan

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