Modern Interface Methods for Semiconductor Process Simulation

  • J. A. Sethian

Abstract

The manufacture of semiconductor devices may include dozens of process steps, all delicately choreographed to produce a functioning, reliable, and efficient device. These steps, such as photolitography, etching and deposition, act to shape and mold the device, replete with various metals, insulators, and interconnects. As one might guess, a trial and error approach to determine a repeatable and reliable recipe is not inexpensive. Numerical simulations which capture the essential details of these processes have a valuable role to play.

Keywords

Combustion Phosphorus Dioxide Argon Mold 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    J. Sethian, Level Set Methods and Fast Marching Methods, 2nd edn. Cambridge University Press, Cambridge, 1999.MATHGoogle Scholar
  2. [2]
    S. Osher and J. Sethian, “Fronts propagating with curvature-dependent speeds: algorithms based on Hamilton-Jacobi formulations,” J. Comput. Phys., 79, 12–49, 1988.MATHCrossRefMathSciNetADSGoogle Scholar
  3. [3]
    J. Sethian, “Curvature and the evolution of fronts,” Commun. Math. Phys., 101, 489–499, 1985.CrossRefMathSciNetADSGoogle Scholar
  4. [4]
    J. Sethian, “Numerical methods for propagating fronts,” In: P. Concus and R. Finn (eds.), Variational Methods for Free Surface Interfaces, Springer-Verlag, New York, pp. 66–80, 1987.Google Scholar
  5. [5]
    D. Adalsteinsson and J. Sethian, “A fast level set method for propagating interfaces,” J. Comput. Phys., 118, 269–277, 1995.MATHCrossRefMathSciNetADSGoogle Scholar
  6. [6]
    D. Chopp, “Computing minimal surfaces via level set curvature flow,” J. Comput. Phys., 106, 77–91, 1993.MATHCrossRefMathSciNetADSGoogle Scholar
  7. [7]
    D. Adalsteinsson and J. Sethian, “The fast construction of extension velocities in level set methods,” J. Comput. Phys., 148, 2–22, 1999.MATHCrossRefMathSciNetADSGoogle Scholar
  8. [8]
    J. Sethian, “Fastmarching methods,” SIAM Rev., 41, 2–22, 1999.CrossRefMathSciNetGoogle Scholar
  9. [9]
    D. Adalsteinsson and J. Sethian, “A unified level set approach to etching, deposition and lithography. I. Algorithms and two-dimensional simulations,” J. Comput. Phys., 120, 128–144, 1995.MATHCrossRefMathSciNetADSGoogle Scholar
  10. [10]
    D. Adalsteinsson and J. Sethian, “A unified level set approach to etching, deposition and lithography. II. Three-dimensional simulations,” J. Comput. Phys., 122, 348–366, 1995.MATHCrossRefMathSciNetADSGoogle Scholar
  11. [11]
    D. Adalsteinsson and J. Sethian, “A unified level set approach to etching, deposition and lithography. III. Complex simulations and multiple effects,” J. Comput. Phys., 138, 193–223, 1997.MATHCrossRefMathSciNetADSGoogle Scholar
  12. [12]
    J. Sethian and D. Adalsteinsson, “An overview of level set methods for etching, deposition, and lithography development,” IEEE Trans. Semiconductor Devices, 10, 167–184, 1996.CrossRefGoogle Scholar

Copyright information

© Springer 2005

Authors and Affiliations

  • J. A. Sethian
    • 1
  1. 1.Department of MathematicsUniversity of CaliforniaBerkeleyUSA

Personalised recommendations