Skip to main content

Atomistic Simulations of Fracture in Semiconductors

  • Chapter
Handbook of Materials Modeling

Abstract

Semiconductors are the materials that underlie nearly all modern electron ics. They include elemental solids, such as silicon and germanium, as well as compounds such as gallium arsenide and silicon carbide. Since their main use is in electronic applications, semiconductors are not usually thought of as structural materials. Nevertheless there are important reasons, both technological and scientific, for the study of mechanical properties of semiconductors. The developing field of micro-machines, from micro-electromechanical systems (MEMS) to nanotechnology, relies on fabrication techniques developed for electronic devices to make microscopic mechanical system. To a large extent it is the link between these fabrication techniques, including deposition, masking, and etching, and the materials that has driven the use of semiconductors as structural components. On a more fundamental level, the ability to fabricate extremely pure and nearly defect free samples makes semiconductors excellent model systems for studying the physics of fracture. In this section I will attempt to give an overview of the ways in which atomistic simulations have been applied to fracture in semiconductors using a number of illustrative examples.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 709.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. K.B. Broberg, Cracks and Fracture, Academic Press, San Diego, 1999.

    Google Scholar 

  2. G.R. Irwin, “Analysis of stresses and strains near the end of a crack traversing a plate,” J. Appl. Mech., 24, 361–364, 1957.

    Google Scholar 

  3. A.A. Griffith, “The phenomena of rupture and flow in solids,” Philos. Trans. R. Soc. London A, 221, 163, 1921.

    Article  ADS  Google Scholar 

  4. J.P. Hirth and J. Lothe, Theory of Dislocations, 2nd edn., Wiley, New York, 1992.

    Google Scholar 

  5. D. Farkas and R.L.B. Selinger, “Atomistics of fracture,” Article 2.23, this volume.

    Google Scholar 

  6. J. Samuels and S.G. Roberts, “The brittle-ductile transition in silicon. I. Experiments,” Proc. Roy. Soc. London A, 421, 1–23, 1989.

    Article  ADS  Google Scholar 

  7. M.L. Cohen, “Concepts for modeling electrons in solids,” Article 1.2, this volume.

    Google Scholar 

  8. W.A. Harrison, Electronic Structure and the Properties of Solids., Freeman, San Francisco, 1980.

    Google Scholar 

  9. M.J. Mehl and D.A. Papaconstantopoulos, “Tight-binding total energy methods for magnetic materials and multi-element systems,” Article 1.14, this volume.

    Google Scholar 

  10. C.Z. Wang and K.M. Ho, “Environment-dependent tight-binding potential models,” Article 1.15, this volume.

    Google Scholar 

  11. J. Justo, “Interatomic potentials: covalent bonds,” Article 2.4, this volume.

    Google Scholar 

  12. P. Haasen, Physical Metallurgy, Cambridge University Press, Cambridge, 1986.

    Google Scholar 

  13. A.Y. Liu, and M.L. Cohen, “Prediction of new low compressibility solids,” Science, 245, 841–842, 1989.

    Article  ADS  Google Scholar 

  14. J.R. Rice, “Dislocation nucleation from a crack tip: an analysis based on the Peierls concept,” J. Mech. Phys. Solids, 40, 239–271, 1992.

    Article  ADS  Google Scholar 

  15. C.R.A. Catlow, “Perspective: energy minimisation techniques in materials modelling,” Article 2.7, this volume.

    Google Scholar 

  16. J. Li, “Basic molecular dynamics,” Article 2.8, this volume.

    Google Scholar 

  17. B. Lawn, Fracture of Brittle Solids, Cambridge University Press, Cambridge, p. 148, 1993.

    Book  Google Scholar 

  18. R. Perez and P. Gumbsch, “An ab initio study of the cleavage anisotropy in silicon,” Acta Mater, 48, 4517–4530, 2000.

    Article  Google Scholar 

  19. D.J. Bammann, “Perspective: continuum modeling of mesoscale/macroscale phenomena,” Article 3.2, this volume.

    Google Scholar 

  20. M. Marder, “Molecular dynamics of cracks,” Comp. Sci. Eng., l, 48–55, 1999.

    Article  Google Scholar 

  21. I. Beery, U. Lev, and D. Sherman, “On the lower limiting velocity of a dynamic crack in brittle solids,” J. Appl. Phys., 93, 2429–2434, 2003.

    Article  ADS  Google Scholar 

  22. L.B. Freund, Dynamic Fracture Mechanics, Cambridge University Press, Cambridge, 1998.

    Google Scholar 

  23. S. Kohlhoff, P. Gumbsch, and H.R Fischmeister, “Crack propagation in BCC crystals studied with a combined finite-element and atomistic model,” Phil. Mag. A, 64, 851–878, 1991.

    Article  ADS  Google Scholar 

  24. Y. Mishin, “Interatomic potentials: metals,” Article 2.2, this volume.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2005 Springer

About this chapter

Cite this chapter

Bernstein, N. (2005). Atomistic Simulations of Fracture in Semiconductors. In: Yip, S. (eds) Handbook of Materials Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-3286-8_45

Download citation

Publish with us

Policies and ethics