Abstract
Materials are made of atoms. The atomic hypothesis was put forward by the Greek philosopher Demokritos about 25 centuries ago, but was only proven by quantitative arguments in the 19th and 20th centuries, beginning with the work of John Dalton (1766–1844) and through the development of quantum mechanics, the theory that provided a complete and accurate description of the properties of atoms. The very large number of atoms encountered in a typical material (of order ∼1024or more) precludes any meaningful description of its properties based on a complete account of the behavior of each and every atom that comprises it. Special cases, such as perfect crystals, are exceptions where symmetry reduces the number of independent atoms to very few; in such cases, the properties of the solid are indeed describable in terms of the behavior of the few independent atoms and this can be accomplished using quantum mechanical methods. However, this is only an idealized model of actual solids in which perfect order is broken either by thermal disorder or by the presence of defects that play a crucial role in determining the physical properties of the system.
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References
P. Hohenberg and W. Kohn, “Inhomogeneous electron gas,” Phys. Rev., 136, B864–871, 1964.
W. Kohn and L.J. Sham, “Self-consistent equations including exchange and correla-tion effects,” Phys. Rev. A, 140, 1133–1138, 1965.
R.M. Martin, Electronic Structure: Basic Theory and Practical Methods, Cambridge University Press, Cambridge, 2004.
R. Car and M. Parrinello, “Unified approach for molecular dynamics and density-functional theory,” Phys. Rev. Lett., 55, 2471–2474, 1985.
F.H. Stillinger and T.A. Weber, “Computer simulation of local order in condensed phases of silicon,” Phys. Rev. B, 31, 5262–5271, 1985.
J. Tersoff, “New empirical model for the structural properties of silicon,” Phys. Rev. Lett., 56, 632–635, 1986.
J. Justo, M.Z. Bazant, E. Kaxiras, V.V. Bulatov, and S. Yip, “Interatomic potential for silicon defects and disordered phases,” Phys. Rev. B, 58, 2539–2550, 1998.
A.E Voter, Intermetallic Compounds, vol. 1, Wiley, New York, pp. 77, 1994.
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Kaxiras, E., Yip, S. (2005). Introduction: Atomistic Nature of Materials. In: Yip, S. (eds) Handbook of Materials Modeling. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-3286-8_22
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DOI: https://doi.org/10.1007/978-1-4020-3286-8_22
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