Abstract
The “ideal strength” or the “theoretical strength” is originally defined as the stress at which a perfect crystal becomes mechanically unstable, and is a fundamental mechanical parameter of material. The definition can be extended to the mechanical instability of inhomogeneous structures. This paper reviews the simulations on the “ideal strength” conducted by our groups based on quantum mechanics, and three cases are presented. (1)The ideal shear strength of silicon is precisely evaluated by ab initio calculations. (2)The ideal deformation of carbon nanotubes and its relationship with the electric conductivity are examined by semi–empirical band calculation. (3)The structure and strength of interface between aluminum and silicon are investigated by ab initio molecular dynamics simulations.
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Umeno, Y., Kitamura, T. (2004). Study on Strength of Microscopic Material by Simulations with Atom and Electron Models. In: Kitagawa, H., Shibutani, Y. (eds) IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength. Solid Mechanics and its Applications, vol 115. Springer, Dordrecht. https://doi.org/10.1007/978-1-4020-2111-4_37
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DOI: https://doi.org/10.1007/978-1-4020-2111-4_37
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