Pumping of Parametric Diodes for Microwave Frequencies

Abstract

Let us consider a semiconductor junction. We know that the capacitance of the junction depends on the voltage applied to it. In general, the differential capacitance is expressed by the relation:

$$ C = \frac{{{C_{{0_\upsilon }}}}}{{\sqrt[n]{{1 + V/\phi }}}} $$

((8.1))

where C _0v is the differential capacitance with zero voltage at the terminals of the junction; V is a voltage applied to the terminals of the junction (positive in the cut-off direction); and ϕ is a characteristic parameter which depends on the nature of the semiconductors used. The degree, n, of the root is determined by the method of construction of the junction; n lies between 2 and 3. In order to simplify the study of parametric systems, it is often practical to use the differential elastance (inverse of the differential capacitance) the expression for which is:

$$ S = {S_0}_\upsilon \sqrt[n]{{1 + V/\phi }} $$

((8.2))