Abstract
During the course of the previous chapter, the properties of some two terminal junction devices were examined. The text concentrated on single junctions although it is quite simple to extend the concepts to multijunction structures. The punch-through diode and bulk barrier diode (both single carrier devices) were presented for consideration as problems at the end of the chapter.
This is a preview of subscription content, log in via an institution to check access.
Preview
Unable to display preview. Download preview PDF.
Reference
A. Blicher (1976). Thyristor Physics, Springer, New York.
Author information
Authors and Affiliations
Copyright information
© 1987 Donard de Cogan
About this chapter
Cite this chapter
de Cogan, D. (1987). Junction Transistors. In: Solid State Devices. Palgrave, London. https://doi.org/10.1007/978-1-349-18658-7_7
Download citation
DOI: https://doi.org/10.1007/978-1-349-18658-7_7
Publisher Name: Palgrave, London
Print ISBN: 978-0-333-40973-2
Online ISBN: 978-1-349-18658-7
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)