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Power Electronics pp 124–158Cite as

Driving the Transistor, and its Protection

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Abstract

The bipolar transistor is essentially a current-controlled device. As illustrated in figure 7.1a, a current must be supplied between the base and emitter terminals to produce collector current flow. The magnitude of base drive current to produce a given collector current depends on the gain, which inevitably is low for high-voltage transistors when operated in a saturated on-state.

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Reading list

  • International Rectifier, HEXFET Data Book, HDB-2, 1982–83.

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  • Peter, J. M., The Power Transistor in its Environment, Thomson-CSF, Sescosem, 1978.

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  • Siliconix Inc.,Mospower Design Catalog, January 1983.

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Author information

Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, Heriot-Watt University, Edinburgh, UK

    B. W. Williams B.Sc., Dip.Eng., B.Eng., M.Sc., Ph.D., D.I.C. (Professor of Electrical Engineering)

Authors
  1. B. W. Williams B.Sc., Dip.Eng., B.Eng., M.Sc., Ph.D., D.I.C.
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Copyright information

© 1987 B. W. Williams

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Cite this chapter

Williams, B.W. (1987). Driving the Transistor, and its Protection. In: Power Electronics. Palgrave, London. https://doi.org/10.1007/978-1-349-18525-2_7

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  • DOI: https://doi.org/10.1007/978-1-349-18525-2_7

  • Publisher Name: Palgrave, London

  • Print ISBN: 978-0-333-39662-9

  • Online ISBN: 978-1-349-18525-2

  • eBook Packages: EngineeringEngineering (R0)

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