Cooling of Power Switching Semiconductor Devices

  • B. W. Williams
Chapter

Abstract

Semiconductor power losses are dissipated in the form of heat, which must be transferred away from the switching junction. The reliability and life expectancy of any power semiconductor are directly related to the maximum device junction temperature experienced. It is therefore essential that the thermal design determines accurately the maximum junction temperature from the device power dissipation.

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Reading list

  1. Fishenden, M. and Saunders, O. A., An Introduction to Heat Transfer, Oxford University Press, 1982.Google Scholar
  2. International Rectifier, HEXFET Data Book, HDB-2, 1983.Google Scholar
  3. Toshiba, Power Transistor Semiconductor Data Book, 1983.Google Scholar

Copyright information

© B. W. Williams 1987

Authors and Affiliations

  • B. W. Williams
    • 1
  1. 1.Department of Electrical and Electronic EngineeringHeriot-Watt UniversityEdinburghUK

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