Cooling of Power Switching Semiconductor Devices

Williams, B. W.

doi:10.1007/978-1-349-18525-2_5

B. W. Williams B.Sc., Dip.Eng., B.Eng., M.Sc., Ph.D., D.I.C.²

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Abstract

Semiconductor power losses are dissipated in the form of heat, which must be transferred away from the switching junction. The reliability and life expectancy of any power semiconductor are directly related to the maximum device junction temperature experienced. It is therefore essential that the thermal design determines accurately the maximum junction temperature from the device power dissipation.

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Reading list

Fishenden, M. and Saunders, O. A., An Introduction to Heat Transfer, Oxford University Press, 1982.
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International Rectifier, HEXFET Data Book, HDB-2, 1983.
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Toshiba, Power Transistor Semiconductor Data Book, 1983.
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Authors and Affiliations

Department of Electrical and Electronic Engineering, Heriot-Watt University, Edinburgh, UK
B. W. Williams B.Sc., Dip.Eng., B.Eng., M.Sc., Ph.D., D.I.C. (Professor of Electrical Engineering)

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B. W. Williams B.Sc., Dip.Eng., B.Eng., M.Sc., Ph.D., D.I.C.
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Williams, B.W. (1987). Cooling of Power Switching Semiconductor Devices. In: Power Electronics. Palgrave, London. https://doi.org/10.1007/978-1-349-18525-2_5

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DOI: https://doi.org/10.1007/978-1-349-18525-2_5
Publisher Name: Palgrave, London
Print ISBN: 978-0-333-39662-9
Online ISBN: 978-1-349-18525-2
eBook Packages: EngineeringEngineering (R0)

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