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Electrical, Electronic and Optical Properties

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Science of Engineering Materials
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Abstract

All engineering materials can be classified depending on their electrical behaviour, into conductors, semiconductors and insulators. Electrical conductors are materials having high electrical conductivity or low resistivity, with the resistivity in the range of 10−6 to 10−4 ohm.cm (Table 2.1). Electrical insulators, on the other hand, have resistivities varying from 108 to 1020 ohm.cm. Between these two extremes is a wide spectrum of materials, called semiconductors, with resistivities in the range of 10−2 to 106 ohm.cm. The semiconductors of engineering importance have resistivities, typically between 1 and 104 ohm.cm.

Typical Resistivity Values at 20°C

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References

  1. Dekker, A.J., Solid State Physics, Macmillan, London, 1958, Chapter 6.

    Google Scholar 

  2. Op. cit., Chapter 10.

    Google Scholar 

  3. Morin, F.J. and Maita, J.P., ‘Electrical Properties of Silicon Containing Arsenic and Boron’, Phys. Rev., 1954, 96, 28.

    Article  Google Scholar 

  4. —, ‘Conductivity and Hall Effect in the Intrinsic Range of Germanium’, Phys. Rev., 1954, 94, 1525.

    Article  Google Scholar 

  5. Dekker, A.J., op. cit., Chapter 13.

    Google Scholar 

  6. Hall, R.N., ‘Electron-Hole Recombination in Germanium’, Phys. Rev., 1952, 87, 387.

    Article  Google Scholar 

  7. Shockley, W. and Read, W.T., ‘Statistics of the Recombination of Holes and Electrons’, Phys. Rev., 1952, 87, 835.

    Article  Google Scholar 

  8. Shockley, W., ‘The Theory of P-N Junctions in Semiconductors and P-N Junction Transistor’, Bell System Tech. J., 1949, 28, 435.

    Article  Google Scholar 

  9. Sah, C.T., Noyce, R.N. and Shockley, W., ‘Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics’, Proc. IRE, 1957, 45, 1228.

    Article  Google Scholar 

  10. Moll, J.L., ‘The Evolution of the Theory for the Voltage-Current Characteristics of P-N Junctions’, Proc. IRE, 1958, 46, 1076.

    Article  Google Scholar 

  11. Moll, J.L., Physics of Semiconductors, McGraw-Hill, New York, 1964, Chapters 11 and 12.

    Google Scholar 

  12. Kennedy, D.P. and O’Brien, R.R., ‘Avalanche Breakdown Characteristics of a Diffused P-N Junction’, IRE Trans. Electron Devices, 1962, ED-9, 478.

    Article  Google Scholar 

  13. Armstrong, H L., ‘A Theory of Voltage Breakdown of Cylindrical P-N Junctions with Applications’, IRE Trans. Electron Devices, 1957, ED-4, 15.

    Article  Google Scholar 

  14. Bardeen, J. and Brattain, W.H., ‘The Transistor, a Semiconductor Triode’, Phys. Rev., 1948, 74, 230.

    Article  Google Scholar 

  15. Hall, R.N., ‘Tower Rectifiers and Transistors’, Proc. IRE, 1952, 40, 1512.

    Article  Google Scholar 

  16. Webster, W.M., ‘On the Variation of Junction-transistor Current Amplification Factor with Emitter Current’, Proc. IRE, 1954, 42, 914.

    Article  Google Scholar 

  17. Hall, R N. and Dunlap, W.C., ‘P-N Junctions Prepared by Impurity Diffusion’, Phys. Rev., 1950, 80, 467.

    Article  Google Scholar 

  18. Teal, G.K., Sparks, M. and Buehler, E., ‘Growth of Germanium Single Crystals Containing P-N Junctions’, Phys. Rev., 1951, 81, 637.

    Article  Google Scholar 

  19. Tanenbaum, M. and Thomas, D.E., ‘Diffused Emitter and Base Silicon Transistors’, Bell System Tech. J. 1956, 35, 1.

    Article  Google Scholar 

  20. Lee, L.A., ‘A High-frequency Diffused Base Germanium Transistor’, Bell System Tech. J., 1956, 35, 23.

    Article  Google Scholar 

  21. Frosch, C.J. and Derrick, L., ‘Surface Protection and Selective Masking During Diffusion in Silicon’, J. Electrochem. Soc., 1957, 104, 547.

    Article  Google Scholar 

  22. Murphy, E.J. and Morgan, S.D., ‘Dielectric Properties of Insulation Materials’, Bell System Tech. J., 1937, 16, 493; 1938, 17, 640; 1939, 18, 502.

    Article  Google Scholar 

  23. Von Hippel, A., Dielectric Materials and Applications, M.I.T. Press and John Wiley, New York, 1956.

    Google Scholar 

  24. Wert, C.A. and Thomson, R.M., Physics of Solids, McGraw-Hill, New York, 1970, Chapters 18, 19.

    Google Scholar 

  25. Dekker, A.J., op. cit, Chapter 8.

    Google Scholar 

  26. Megaw, A.D., Ferroelectricity, Methuen & Co. Ltd., London, 1957.

    Google Scholar 

  27. Cady, W.P., Piezoelectricity, McGraw-Hill, New York, 1946.

    Google Scholar 

  28. Dekker, A.J., op. cit., Chapter 11.

    Google Scholar 

  29. MacDonald, D.K.C., ‘Electrical Conductivity of Metals and Alloys at Low Temperatures’, Encyclopedia of Physics, Vol. 14, Springer, Berlin, 1956, pp. 137–97.

    Google Scholar 

  30. Schawlow, A.L. and Townes, C.H., ‘Infrared and Optical Masers’, Phys. Rev., 1958, 112, 1940.

    Article  Google Scholar 

  31. Schawlow, A.L., ‘Optical Masers’, Sci. American, 1961, 204(6), 52.

    Article  Google Scholar 

  32. —, ‘Advances in Optical Masers’, Sci. American, 1963, 209(1), 34.

    Article  Google Scholar 

Further Reading

  • Kittel, C., Introduction to Solid State Physics, John Wiley, New York, 1966.

    Google Scholar 

  • Dunlap, W.C., An Introduction to Semiconductors, John Wiley, New York, 1957.

    Google Scholar 

  • Brophy, J.J., Semiconductor Devices, McGraw-Hill, New York, 1964.

    Google Scholar 

  • Grove, A.S., Physics and Technology of Semiconductor Devices, John Wiley, New York, 1967.

    Google Scholar 

  • Hill, N.E., Vaughan, W.E., Price, A.H. and Davies, M., Dielectric Properties and Molecular Behaviour, Van Nostrand, New Jersey, 1969.

    Google Scholar 

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© 1980 Manas Chanda

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Chanda, M. (1980). Electrical, Electronic and Optical Properties. In: Science of Engineering Materials. Palgrave, London. https://doi.org/10.1007/978-1-349-06055-9_2

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  • DOI: https://doi.org/10.1007/978-1-349-06055-9_2

  • Publisher Name: Palgrave, London

  • Print ISBN: 978-0-333-31818-8

  • Online ISBN: 978-1-349-06055-9

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