Metal Oxide Semiconductor (MOS) Field-Effect Transistors
The use of the field effect for constructing practical transistors may follow several different principles. In figure 2.1 a cross-section of a rectangular piece of semiconductor with ohmic contacts at both ends and an insulated gate electrode on top is shown. A voltage applied on the gate induces charges in the semiconductor and thereby changes the resistance between the contacts. If the semiconductor is doped, there are initially so many free charge carriers that the additional induced charges are hardly noticeable. Such a device has very low sensitivity.
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