Metal Oxide Semiconductor (MOS) Field-Effect Transistors

  • J. T. Wallmark
  • L. G. Carlstedt
Chapter

Abstract

The use of the field effect for constructing practical transistors may follow several different principles. In figure 2.1 a cross-section of a rectangular piece of semiconductor with ohmic contacts at both ends and an insulated gate electrode on top is shown. A voltage applied on the gate induces charges in the semiconductor and thereby changes the resistance between the contacts. If the semiconductor is doped, there are initially so many free charge carriers that the additional induced charges are hardly noticeable. Such a device has very low sensitivity.

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Further Reading

  1. 1.
    J. T. Wallmark and H. Johnson (eds), Field-Effect Transistors, Prentice-Hall, Englewood Cliffs, New Jersey (1966)Google Scholar
  2. 2.
    A. S. Grove, Physics and Technology of Semiconductor Devices, New York (1967)Google Scholar
  3. 3.
    S. M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York (1969)Google Scholar
  4. 4.
    J. R. Burns. High-frequency characteristics of the insulated-gate field-effect transistor, RCA Rev., 28 (1967) 385Google Scholar
  5. 5.
    H. C. Lin, J. L. Halsor and P. J. Hayes. Shielded silicon gate complementary MOS integrated circuit, IEEE Trans. Electron Devices, ED-19 (1972) 1199Google Scholar
  6. 6.
    MOS Transistors. Special issue, Philips techn. Rev. 31 (1970) 7/8/9Google Scholar
  7. 7.
    C. T. Sah. Characteristics of the metal-oxide-semiconductor transistor. IEEE Trans. Electron Devices, ED-11 (1964) 324Google Scholar
  8. 8.
    S. R. Hofstein. An investigation of instability and charge motion in metal—silicon oxide—silicon structures, IEEE Trans. Electron Devices, ED-13 (1966) 222Google Scholar

Copyright information

© J. T. Wallmark and L. G. Carlstedt 1974

Authors and Affiliations

  • J. T. Wallmark
    • 1
  • L. G. Carlstedt
    • 1
  1. 1.Chalmers University of TechnologyGothenburgSweden

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