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Properties of Semiconductors

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Field-Effect Transistors in Integrated Circuits

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Abstract

The basic material of a field-effect transistor is a chemically pure and perfect single crystal of silicon. In such a crystal the atoms are ordered in a periodic pattern such that they are all lined up perfectly throughout the entire lattice. Silicon is a tetravalent element so that Si atoms sit at the apices and at the centre of tetrahedra in the lattice. Therefore a single crystal of silicon when seen from a particular direction appears as shown in figure 1.1. The electrical characteristics of such crystals are best described with the help of energy band models, tools derived from band theory.

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Further Reading

  1. A. S. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York (1967)

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  2. S. M. Sze, Physics of Semiconductor Devices, Wiley-Interscience, New York (1969)

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  3. E. Kooi, The Surface Properties of Oxidized Silicon, Springer-Verlag, New York (1967)

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  4. A. Many, Y. Goldstein, N. B. Grover, Semiconductor Surfaces, Elsevier, New York (1965)

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  5. D. R. Frankl, Electrical Properties of Semiconductor Surfaces, Pergamon, London (1967)

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  6. A. G. Revesz, K. H. Zaininger. The Si-SiO, solid—solid interface system. RCA Rev. 29 (1968) 22

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  7. P. V. Gray. The silicon—silicon dioxide system. Proc. IEEE 57 (1969) 1543

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  8. A. Goetzberger. Ideal MOS curves for silicon. Bell Syst. tech. J. 45 (1966) 1097

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  9. E. Arnold. Surface charges and surface potential in silicon surface inversion layers. IEEE Trans. Electron Devices, ED-15 (1968) 1003

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Author information

Authors and Affiliations

  1. Chalmers University of Technology, Gothenburg, Sweden

    J. T. Wallmark & L. G. Carlstedt

Authors
  1. J. T. Wallmark
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  2. L. G. Carlstedt
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Copyright information

© 1974 J. T. Wallmark and L. G. Carlstedt

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Wallmark, J.T., Carlstedt, L.G. (1974). Properties of Semiconductors. In: Field-Effect Transistors in Integrated Circuits. Palgrave, London. https://doi.org/10.1007/978-1-349-02053-9_2

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  • DOI: https://doi.org/10.1007/978-1-349-02053-9_2

  • Publisher Name: Palgrave, London

  • Print ISBN: 978-1-349-02055-3

  • Online ISBN: 978-1-349-02053-9

  • eBook Packages: EngineeringEngineering (R0)

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