Abstract
Gallium arsenide is one of a number of binary compounds between elements of Group III (B, Al, Ga, In) and Group V (P, As, Sb) of the periodic table whose potential as semiconductors was first pointed out by Welker(1) in 1952. Of these, GaAs has proved the most generally useful, both alone and in its solid solutions with GaP and AlAs. Most applications stem from six basic properties of the semiconductor:
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
H Welker, ZNaturforsch 7a, 744 (1952).
J A Turner, Allen Clark Research Centre, The Plessey Company Limited, —, Private Communication.
M D Sturge, Phys Rev 127, 768 (1962).
C Hilsum, Progress in Semiconductors, 6, 137 (1964).
M H Pilkhun, Phys Stat Sol 25, 9 (1968).
J G Ruch and G S Kino, Phys Rev 174, 921 (1968).
P Butcher, Rep Prog in Phys 30, 1, 97 (1967).
A Reisman and R Rohr, J Electrochem Soc 111, 1425 (1964).
D W Shaw, JElectrochem Soc 113, 904 (1960).
J C Brice, Sol State Elec 10, 335 (1967).
J B Mullin, B W Straughan and W S Brickett, JPhys Chem Solids, 26, 782 (1965).
S J Bass and P E Oliver, 1966 Symposium on GaAs p 41, IP and PS. London.
R K Willardson and W P Allred, 1966 Symposium on GaAs p 35, IP and PS London.
H Rupprecht, 1966 Symposium on GaAs, p 57, IP and PS London.
R W Haisty and G R Cronin, Proc 7th Int Conf on the Physics of Semiconductors, p 1161, Dunod (1964).
J R Knight, D Effer and P R Evans, Solid-State Electronics, 8, 178, 1964.
D V Eddolls, J R Knight and B L H Wilson, 1966 Symposium on GaAs p 3, IP and PS London.
D W Shaw, R W Conrad, E W Mehal and O W Wilson, 1966 Symposium on GaAs, p 10, IP and PS London.
D E Bolger, J Franks, J Gordon and J Whitaker, 1966 Symposium on GaAs, p 16, IP and PS London.
B D Joyce and J B Mullin, 1966 Symposium on GaAs p 23, IP and PS London.
D V Eddolls, Phys Stat Solidi, 17, 67 (1966).
J J Tietjen and J A Amick, J Electrochem Soc 113, 724 (1966).
H C B Hicks and D F Manley, Sol State Comm 7, 1463 (1969).
H Rupprecht, 1966 Symposium on GaAs, p 57, IP and PS London.
Z I Alferov, D Z Garbuzov, E P Morozov and D N Tretyakov, Soviet Phys — Sol State, 10, 9, 2260 (1969)
L W Ankerman, R K Willardson, JAppl Phys 31, 293 (1960).
C M Wolfe, G E Stillman and W T Lindley, JAppl Phys 41, 3088 (1970).
L R Weisberg, JAP 33, 1817 (1962).
P N Butcher, W Fawcett, Phys Letters 21, 489 (1966).
J G Ruch and W Fawcett, JAP 41, 3843 (1970).
A Higashisaka, Japan JAP 9, 583 (1970).
V L Dalal, Appl Phys Letts 16, 489 (1970).
H Kressel, J V Dunse, H Nelson and F Z Hawrylo, JAP 39 2006 (1968).
H Kressel and H Nelson, JAP 40, 3720 (1969).
R K Willardson and A C Beer ‘Semiconductors & Semimetals’ Academic Press (1967).
L R Weisberg, Trans AIME 230, 291 (1964).
D W Yarbrough, Sol State Tech 23, Nov (1968).
Madelung, Physics of III-V Compounds, Wiley (1964).
Proc of the Int Symposia on Gallium Arsenide, 1966, 1968 and 1970, IP and PS London.
Author information
Authors and Affiliations
Editor information
Copyright information
© 1971 Palgrave Macmillan, a division of Macmillan Publishers Limited
About this chapter
Cite this chapter
Wilson, B.L.H., Peart, R.F. (1971). Gallium Arsenide. In: Waller, W.F. (eds) Electronics Design Materials. Macmillan Engineering Evaluations. Palgrave Macmillan, London. https://doi.org/10.1007/978-1-349-01176-6_15
Download citation
DOI: https://doi.org/10.1007/978-1-349-01176-6_15
Publisher Name: Palgrave Macmillan, London
Print ISBN: 978-1-349-01178-0
Online ISBN: 978-1-349-01176-6
eBook Packages: EngineeringEngineering (R0)