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Dielectric Physics Approach for Improvement of Organic-Field Effect Transistors Performance

  • Martin Weis
  • Mitsumasa Iwamoto
Chapter
Part of the Green Energy and Technology book series (GREEN)

Abstract

We present a brief review on charge transport in organic field-effect transistors (OFETs), which is necessary to further design nanostructured devices. Dielectric physics is used to explain charge transport of these organic devices in the steady and transient states. We clearly show the influence of internal fields on charge accumulation and transport, and propose models for potential distributions across the OFET channel. Potential drop on the electrodes (the contact resistance) is also discussed and its control is described. Improvement of OFET performance is explained in terms of the design of device dimensions, materials and operation regime.

Keywords

Contact Resistance Organic Semiconductor Gate Insulator Gate Electrode Drain Electrode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag London Limited 2011

Authors and Affiliations

  1. 1.Institute of PhysicsSlovak Academy of SciencesBratislavaSlovakia
  2. 2.Department of Physical ElectronicsTokyo Institute of TechnologyTokyoJapan

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