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Finite Element Method for Stress-Induced Voiding

  • Cher Ming Tan
  • Zhenghao Gan
  • Wei Li
  • Yuejin Hou
Chapter
Part of the Springer Series in Reliability Engineering book series (RELIABILITY)

Abstract

With the basic physics of stress-induced voiding (SIV) introduced in Chap. 2, the detailed finite element modeling of the mechanisms of SIV in Cu interconnect will be described here. The understanding of the voiding mechanism through the modeling can certainly shed light on the future design and process improvement of the multilevel interconnect structures. The most widely used commercial finite element software for finite element analysis is ANSYS or ABAQUS.

Keywords

Stress Gradient Hydrostatic Stress Void Growth Finite Element Method Model Finite Element Method Simulation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag London Limited  2011

Authors and Affiliations

  • Cher Ming Tan
    • 1
  • Zhenghao Gan
    • 2
  • Wei Li
    • 3
  • Yuejin Hou
    • 1
    • 4
  1. 1.School of Electrical & Electronic EngineeringNanyang Technological UniversitySingaporeSingapore
  2. 2.Technology Research & DevelopmentSemiconductor Manufacturing International (Shanghai) Corp.ShanghaiPeople’s Republic of China
  3. 3.Singapore Institute of Manufacturing TechnologySingaporeSingapore
  4. 4.SingaporeSingapore

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