Development of Physics-Based Modeling for ULSI Interconnections Failure Mechanisms: Electromigration and Stress-Induced Voiding

  • Cher Ming Tan
  • Zhenghao Gan
  • Wei Li
  • Yuejin Hou
Part of the Springer Series in Reliability Engineering book series (RELIABILITY)


In this chapter, we present a comprehensive review on the physics-based modeling of EM phenomena in ULSI interconnections over the last three decades. In the evolution of the physics-based modeling, some aspects of the physics are dropped for simplification, and some are added to accommodate new understanding on the EM physics as well as for the new development of the interconnect technology. With the continuous change in the metallization system and materials, the aspects of physics that have been dropped may become important again, and new physics might also occur with these changes in metallization system. Here, we re-examine the justification of dropping or adding various physical aspects in the EM modeling during their evolution and their implications on the future interconnect system.


Vacancy Concentration Phase Field Model Metal Line Atomic Flux Void Surface 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag London Limited  2011

Authors and Affiliations

  • Cher Ming Tan
    • 1
  • Zhenghao Gan
    • 2
  • Wei Li
    • 3
  • Yuejin Hou
    • 1
    • 4
  1. 1.School of Electrical & Electronic EngineeringNanyang Technological UniversitySingaporeSingapore
  2. 2.Technology Research & DevelopmentSemiconductor Manufacturing International (Shanghai) Corp.ShanghaiPeople’s Republic of China
  3. 3.Singapore Institute of Manufacturing TechnologySingaporeSingapore
  4. 4.SingaporeSingapore

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