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Processes and Tools for Co Alloy Capping

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Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

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The copper Damascene process is widely established and has brought higher performance to semiconductor devices. Copper has replaced aluminum because of its lower resistivity, higher reliability, and lower cost and was expected to be better because of its higher activation energy for diffusion. However, copper also suffers from electromigration (EM) and stress migration (SM) reliability issues (Fig. 30.1) as geometries continue to shrink, and current densities increase.

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Authors and Affiliations

  1. Blue29, 615, 9408, Palomar Avenue, Sunnyvale, CA, USA

    Bill Lee & Igor Ivanov

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  1. Bill Lee
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  2. Igor Ivanov
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Correspondence to Bill Lee .

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Editors and Affiliations

  1. Tel Aviv University, Ramat Aviv, Tel Aviv, 69978, Israel

    Yosi Shacham-Diamand

  2. Dept. Applied Chemistry, Waseda University, Okubo 3-4-1 , Tokyo, 169-8555, Japan

    Tetsuya Osaka

  3. Emerson Network Power, Cooligy Precision Cooling, Maude Avenue 800, Mountain View, 94043, U.S.A.

    Madhav Datta

  4. Division of Corporate Relations, The University of Tokyo, Hongo 7-3-1, Tokyo , 113-8654, Japan

    Takayuki Ohba

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Lee, B., Ivanov, I. (2009). Processes and Tools for Co Alloy Capping. In: Shacham-Diamand, Y., Osaka , T., Datta, M., Ohba, T. (eds) Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications. Springer, New York, NY. https://doi.org/10.1007/978-0-387-95868-2_30

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