Electrochemical View of Copper Chemical-Mechanical Polishing (CMP)

  • D. Starosvetsky
  • Y. Ein-EliEmail author


Copper is the metal of choice, replacing aluminum in integrated circuit interconnections [1]. This switch was emerged and stimulated due to copper advantage characteristics, such as low resistivity and high immunity to electro-migration, which in turn result in greater circuit reliability and markedly higher clock frequency. Copper dual-Damascene technology includes two main electrochemical steps. First step is the electrochemical copper deposition (or copper electroplating) into trenches and vias. Second electrochemical step in copper Damascene technology utilizes chemical–mechanical polishing or planarization (CMP) aiming at the removal of overburden copper after its electrochemical deposition. CMP primer objective is to achieve a global planarization of patterned surface. CMP appears to be the most promising pattern delineation technique [2–6]. Planarization via CMP process is achieved by simultaneous actions of both mechanical abrasion and electrochemical dissolution of the planarized metal.


Passive Film Open Circuit Potential Anodic Current Copper Surface Nitric Acid Concentration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.Department of Materials Science and EngineeringTechnion-Israel Institute of TechnologyHaifaIsrael

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