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Introduction to Electrochemical Process Integration for Cu Interconnects

  • Takayuki Ohba
Chapter

Abstract

This chapter focuses on advanced multilevel interconnects, contributed by distinguished authors in the following sections: Damascene Concept and Process Steps (Nobuyoshi Kobayashi), Advanced BEOL Technology Overview (Takashi Yoda and Hideshi Miyajima), Lithography for Cu Damascene fabrication (Yoshihiro Hayashi), Physical Vapor Deposition Barriers for Cu metallization PVD Barriers (Junichi Koike), Low-k dielectrics (Yoshihiro Hayashi), CMP for Cu Processing (Manabu Tsujimura), Electrochemical View of Copper Chemical Mechanical Polishing (CMP) (D. Starosvetsky and Y. Ein-Eli), and Copper Post-CMP Cleaning (D. Starosvetsky and Y. Ein-Eli).

Keywords

Barrier Layer Chemical Mechanical Polishing Chemical Mechanical Polishing Process Distinguished Author Damascene Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.The University of TokyoTokyoJapan

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