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Non-Equilibrium Electrical Properties of Semiconductors

  • Manijeh Razeghi
Chapter

In the previous Chapter, we established the basic relations and formalism for the distribution of electrons in the conduction band and holes in the valence band at thermal equilibrium. Although the equilibrium state for electrons and holes in a semiconductor is the result of interactions between carriers or between carriers and phonons, it does not depend on the way this state is reached. The knowledge of the equilibrium properties is therefore not sufficient and this is all the more true since semiconductor devices usually work under non-equilibrium conditions. In this Chapter, we will thus discuss the dynamics of electrons and holes, including electrical conductivity, Hall effect, diffusion, as well as recombination mechanisms.

Keywords

Valence Band Electric Field Strength Surface Recombination Auger Recombination Recombination Mechanism 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag US 2009

Authors and Affiliations

  • Manijeh Razeghi
    • 1
  1. 1.Department of Electrical Engineering & Computer ScienceNorthwestern UniversityEvanstonUSA

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