First Order, Quasi-Static, SOI Charge Conserving Power Dissipation Model

Part of the IFIP International Federation for Information Processing book series (IFIPAICT, volume 291)


Conventional MOS models for circuit simulation assume that the channel capacitances do not contribute to net power dissipation. Numerical integration of channel currents and instantaneous terminal voltages however shows the existence of higher order dissipating terms. To overcome these limitations, we present a self-consistent, first order, quasi-static power dissipation model that is able to predict dissipative (transport) and conserved (charging) current components. Charge conservation is insured by using the current continuity equation. An analytical expression for energy stored in the channel is derived by separating out current components that contribute to net power dissipation. The power dissipation estimation is made computationally efficient by leaving out energy conserving terms.


Energy Function Power Dissipation Current Component Terminal Voltage Charge Redistribution 
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  1. [1]
    [1] J.E. Meyer, “MOS models and circuit simulation,” RCA Rev., vol. 32, pp. 42–63, 1971.Google Scholar
  2. [2]
    D.E. Ward, “Charge-Based Modeling of Capacitance in MOS Transistors”, Stanford Electronics Lab., Stanford University, Tech. Rep. F201-11, June 1981.Google Scholar
  3. [3]
    [3] B.J. Sheu, D.L. Scharfetter, C. Hu and D. O. Pederson, “A compact IGFET charge model”, IEEE Transactions on Circuits Systems, vol. CAS-31, pp 745–748, 1984.CrossRefGoogle Scholar
  4. [4]
    [4] K.A. Sakallah, Yao-Tsung Yen, and S.S.Greenberg, “A first-order charge conserving MOS capacitance model,” IEEE Transactions on Computer-Aided Design, vol. 9, pp. 99–108, January 1990.CrossRefGoogle Scholar
  5. [5]
    S. S. Chung, “A charge-based capacitance model of short-channel MOSFET's,” IEEE Transactions on Computer-Aided Design, vol. 8, no. 1, January 1989.Google Scholar
  6. [6]
    [6] M. A. Cirit, “The Meyer model revisited: why is charge not conserved?” IEEE Transactions on Computer-Aided Design, vol. CAD-8, pp. 1033–1037, October 1989.CrossRefGoogle Scholar
  7. [7]
    P. Yang, B.D. Epler and P. K. Chatterjee, “An Investigation of the Charge Conservation Problem for MOSFET Circuit Simulation”, IEEE Journal of Solid-State Circuits, Vol. SC-18, February 1983.Google Scholar
  8. [8]
    A. S. Roy, C. C. Enz and Jean-Michel Sallese, “Source-Drain Partitioning in MOSFET”, IEEE Trans. On Elec. Devices, vol. 54, No. 6, June 2007.Google Scholar
  9. [9]
    [9] A. Aarts, R. van der Hout, J. Paasschens, A. Scholten, M. Willemsen, and D. Klaassen, “New fundamental insight into capacitance modeling of laterally nonunion MOS devices, “IEEE Trans. Electron Devices, vol. 53, No. 2, pp. 270–278, Feb 2006.CrossRefGoogle Scholar
  10. [10]
    J.G. Fossum, H. Jeong, and S. Veeraraghavan, “Significance of the channel-charge partition in the transient MOSFET model,” IEEE Transactions on Electron Devices, vol. Ed-33, no.10, October 1986.Google Scholar
  11. [11]
    H. Lim and J. Fossum, “A charge-based large-signal model for thin-film SOI MOSFET's”, IEEE Journal of Solid-State Circuits, Vol. Sc-20, no.1, February 1985.Google Scholar
  12. [12]
    W. Lie, M. Chang, “Transistor Transient Studies Including Trans-Capacitive Current and Distributive Gate Resistance for Inverter Circuits”, IEEE Trans. on Circuits and Systems, Vol. 45, April 1998.Google Scholar
  13. [13]
    S. Sharma, “First Order, Quasi-Static, Charge Conserving MOSFET Channel Capacitance Model,” PhD. Dissertation, Oklahoma State University, December 2007.Google Scholar
  14. [14]
    [14] S. Y. Oh, D. E. Ward and R. W. Dutton, “Transient analysis of MOS transistors”, IEEE J. Solid-State Circuits, vol. SC-15, pp. 636–643, 1980.Google Scholar
  15. [15]
    Y. Cheng and C. Hu, “MOSFET modeling and BSIM3 user’s guide”, Kluwer Academic Publishers, 1999.Google Scholar
  16. [16]
    William Liu, “MOSFET models for SPICE simulation, including BSIM3v4 and BSIM4”, John Wiley and Sons, Inc., 2001.Google Scholar
  17. [17]
    Yannis Tsividis, “Operation and the Modeling of The MOS Transistors”, Oxford University Press, June 2003.Google Scholar
  18. [18]
    Wolfram Reseach, Inc., Mathematica, Version 5.2, Champaign, IL (2005).Google Scholar

Copyright information

© Springer-Verlag US 2009

Authors and Affiliations

  1. 1.Oklahoma State UniversityStillwater

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