• Shoichiro Kawashima
  • Jeffrey S. Cross
Part of the Integrated Circuits and Systems book series (ICIR)

Ferroelectric materials show spontaneous polarization; FeRAM utilizes the positive and negative polarization direction corresponding to “1” and “0” states for stored data. The basic idea behind FeRAM appeared in 1963 [1] and 1988 [2], however, there have been many scientific and technical improvements needed to convert FeRAM technology into manufactured devices and still further improvements in materials, process fabrication, and circuit architecture are required for further device scaling. This chapter intends to serve as a review primarily focusing on the timeframe from 2000 to 2007. Previously, circuit and architecture of FeRAM devices regarding circuit innovations up to 2000 was summarized by Prof.


Spontaneous Polarization Error Correction Code Metal Organic Chemical Vapor Deposition Ferroelectric Material Thin Ferroelectric Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.



The authors would like to thank Dr. H. Arimoto and Mr. A. Inoue for their encouragement regarding the writing of this chapter, also appreciation is extended to Dr. T. Eshita, Dr. H. Tanaka, Dr. J. Watanabe, Dr. K. Sugiyama, and Mr. K. Takai for many useful discussions on material properties as well as the circuit and process engineers of Fujitsu Micro Electronics Ltd. (FML) for realizing BGS devices.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  1. 1.Fujitsu Microelectronics LimitedSystem Micro DivisionNakahara-kuJapan

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