Abstract
Optical and electrical properties of the phase change material Ge2Sb2Te5 are reviewed for its three phases. Implications of these data for the energy distribution of the density of electron states in the vicinity of the band edges are described. Near-band edge optical data obtained from ellipsometry and optical absorption spectra have been fitted with dispersion equations to determine values of ∼ 0.7 eV for the optical bandgap of the amorphous phase, and ∼ 0.5 eV for the highly conducting fcc and hexagonal phases. Infrared absorption spectra exhibit the effects of free carrier absorption in both crystalline phases. Conductivity at ∼ 300 K is dominated by holes in all three phases; hole concentrations and mobilities are 1020 cm−3 and ∼ 30 cm2/V-s in hexagonal, and 1020 cm-3 and ∼ 1 cm2/V-s in fcc. Temperature dependence of the sheet resistance of thin film Ge2Sb2Te5 documents the dramatic decreases in electrical resistance at the amorphous-to-fcc and fcc-to-hexagonal phase transitions. Comparison of the temperature dependence of the electrical properties in each of the three phases of Ge2Sb2Te5 provides additional insights concerning their conduction mechanisms.
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References
Heavens, O.S.: Optical Properties of Thin Solid Films. Dover Publications, New York (1965)
Lee, B.-S., Abelson, J.R., Bishop, S.G., Kang, D.-H., Cheong, B., Kim, K.-B.: Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases. J. Appl. Phys. 97, 093509 (2005)
Tsu, D.V.: Obtaining optical constants of thin GexSbyTez films from measurements of reflection and transmission. J. Vac. Sci. Technol., A 17, 1854-1860 (1999)
Jackson, W.B., Amer, N.M., Boccara, A.C., Fournier, D.: Photothermal deflection spectroscopy and detection. Appl. Opt. 20, 1333-1344 (1981)
Olson, J.K., Li, H., Ju, T., Viner, J.M., Taylor, P.C.: Optical properties of amorphous GeTe, Sb2Te3, and Ge2Sb2Te5: The role of oxygen. J. Appl. Phys. 99, 103508 (2006)
Tompkins, H.G., McGahan, W.A.: Spectroscopic ellipsometry and reflectometry: a user’s guide. Wiley, New York (1999)
Welnic, W., Pamungkas, A., Detemple, R., Steimer, C., Blugel, S., Wuttig, M.: Unravelling the interplay of local structure and physical properties in phase-change materials. Nature Mater. 5, 56-62 (2006)
Welnic, W., Botti, S., Reining, L., Wuttig, M.: Origin of the optical contrast in phase-change materials. Phys. Rev. Lett. 98 (2007)
Coombs, J.H., Jongenelis, A.P.J.M., van Es-Spiekman, W., Jacobs, B.A.J.: Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth. J. Appl. Phys. 78, 4906-4917 (1995)
Milliron, D.J., Raoux, S., Shelby, R., Jordan-Sweet, J.: Solution-phase deposition and nanopatterning of GeSbSe phase-change materials. Nature Mater. 6, 352-356 (2007)
Jeong, T.H., Kim, M.R., Seo, H., Kim, S.J., Kim, S.Y.: Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films. J. Appl. Phys. 86, 774-778 (1999)
Kim, Y., Kim, S.J., Kim, S.Y., An, S.H., Suh, D.-S., Noh, J.-S., Lee, S.M., Kim, K.H.P., Shin, W.-C., Khang, Y.: Experimental setup for in situ investigation of phase changing behavior in phase-change random-access memory medium by microfocusing nanosecond-time-resolved ellipsometry. Jpn. J. Appl. Phys. Part 1 45, 6452-6454 (2006)
Mott, N.F., Davis, E.A.: Electronic Processes in Non-crystalline Materials. 2nd ed. Clarendon Press; Oxford University Press, Oxford, New York (1979)
Tauc, J., Grigorovici, R., Vancu, A.: Optical properties and electronic structure of amorphous germanium. Physica Status Solidi 15, 627-637 (1966)
Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F., Bez, R.: Electronic switching in phase-change memories. IEEE Trans. Electron Devices 51, 452-459 (2004)
Kato, T., Tanaka, K.: Electronic properties of amorphous and crystalline Ge2Sb2Te5 films. Jpn. J. Appl. Phys. Part 1 44, 7340-7344 (2005)
Boer, K.W.: Survey of Semiconductor Physics: Electrons and other Particles in Bulk Semiconductors. Van Nostrand Reinhold, New York (1990)
Moss, T.S.: Optical Properties of Semi-Conductors. Butterworths Scientific Publications, London (1959)
Gonzalez-Hernandez, J., Lopez-Cruz, E., Yanez-Limon, M., Strand, D., Chao, B.B., Ovshinsky, S.R.: Free carrier absorption in the Ge:Sb:Te system. Solid State Commun. 95, 593-596 (1995)
Mendoza-Galvan, A., Gonzalez-Hernandez, J.: Drude-like behavior of Ge:Sb:Te alloys in the infrared. J. Appl. Phys. 87, 760-765 (2000)
Shelimova, L.E., Karpinskii, O.G., Konstantinov, P.P., Kretova, M.A., Avilov, E.S., Zemskov, V.S.: Composition and properties of layered compounds in the GeTe-Sb2Te3 system. Inorg. Mater. 37, 342-348 (2001)
Friedrich, I., Weidenhof, V., Njoroge, W., Franz, P., Wuttig, M.: Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements. J. Appl. Phys. 87, 4130-4134 (2000)
Lyeo, H.-K., Cahill, D.G., Lee, B.-S., Abelson, J.R., Kwon, M.-H., Kim, K.-B., Bishop, S.G., Cheong, B.-k.: Thermal conductivity of phase-change material Ge2Sb2Te5. Appl. Phys. Lett. 89, 151904 (2006)
Miao, X.S., Chong, T.C., Huang, Y.M., Lim, K.G., Tan, P.K., Shi, L.P.: Dependence of optical constants on film thickness of phase-change media. Jpn. J. Appl. Phys. Part 1 38, 1638-1641 (1999)
Liang, R.G., Peng, C.B., Nagata, K., Daly-Flynn, K., Mansuripur, M.: Optical characterization of multilayer stacks used as phase-change media of optical disk data storage. Appl. Opt. 41, 370-378 (2002)
Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N., Takao, M.: Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin-films for an optical disk memory. J. Appl. Phys. 69, 2849-2856 (1991)
Kim, J.-H., Kim, M.R.: Effects of microstructure on optical properties of Ge2Sb2Te5 thin films. Jpn. J. Appl. Phys. Part 1 37, 2116-2117 (1998)
Lai, Y.F., Qiao, B.W., Feng, J., Le, Y., La, L.Z., Lin, Y.Y., Tang, T.A., Cai, B.C., Chen, B.M.: Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory. J. Electron. Mater. 34, 176-181 (2005)
Kyratsi, T., Chrissafis, K., Wachter, J., Paraskevopoulos, K.M., Kanatzidis, M.G.: KSb5S8: A wide bandgap phase-change material for ultra high density rewritable information storage. Adv. Mater. 15, 1428-1431 (2003)
Gutwirth, J., Wagner, T., Bezdicka, P., Vlcek, M., Kasap, S.O., Frumar, M.: Influence of silver concentration in Agx(Sb0.33S0.67)100-x thin amorphous films on photoinduced crystallization. J. Non-Cryst. Solids 353, 1431-1436 (2007)
Kolobov, A.V., Fons, P., Frenkel, A.I., Ankudinov, A.L., Tominaga, J., Uruga, T.: Understanding the phase-change mechanism of rewritable optical media. Nature Mater. 3, 703-708 (2004)
Tanaka, K.: Comment on ‘‘Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases’’ [J. Appl. Phys. 97, 093509 (2005)]. J. Appl. Phys. 101, 026111 (2007)
Lee, B.-S., Abelson, J.R., Bishop, S.G., Kang, D.-H., Cheong, B.-K., Kim, K.-B.: Response to ‘‘Comment on ’Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases’’’ [J. Appl. Phys. 97, 093509 (2005)]. J. Appl. Phys. 101, 026112 (2007)
Lee, H.S., Cheong, B.-K., Lee, T.S., Jeong, J.-H., Lee, S., Kim, W.M., Kim, D.: Origin of nonlinear optical characteristics of crystalline Ge-Sb-Te thin films for possible superresolution effects. Jpn. J. Appl. Phys. Part 2 46, 277-279 (2007)
Shimakawa, K., Kolobov, A., Elliott, S.R.: Photoinduced effects and metastability in amorphous semiconductors and insulators. Adv. Phys. 44, 475-588 (1995)
Lee, B.-S., Xiao, Y., Bishop, S.G., Abelson, J.R., Raoux, S., Deline, V.R., Kwon, M.-H., Kim, K.-B., Cheong, B., Li, H., Taylor, P.C.: Photo-oxidation and the absence of photodarkening in Ge2Sb2Te5 phase change material, In: Edwards, A.H., Taylor, P.C., Maimon, J. Kolobov, A. (eds.) Chalcogenide Alloys for Reconfigurable Electronics, MRS Proc., Vol. 918, p. 0918-H0902-0904, San Francisco, CA (2006)
Pamukchieva, V., Szekeres, A.: Influence of illumination on the optical bandgap energy value of GexSb20-xTe80 films. J. Optoelectron. Adv. Mater. 7, 1277-1280 (2005)
Kalb, J., Spaepen, F., Wuttig, M.: Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys. Appl. Phys. Lett. 84, 5240-5242 (2004)
Kim, D.H., Merget, F., Laurenzis, M., Bolivar, P.H., Kurz, H.: Electrical percolation characteristics of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films during the amorphous to crystalline phase transition. J. Appl. Phys. 97 (2005)
Ovshinsky, S.R.: Optical cognitive information processing - A new field. Jpn. J. Appl. Phys. Part 1 43, 4695-4699 (2004)
Ovshinsky, S.R., Czubatyj, W.: New developments in optical phase change memory, In: Proceedings of SPIE - The International Society for Optical Engineering, vol. 4085, p. 15-22, Society of Photo-Optical Instrumentation Engineers, Shanghai (2001)
Ventrice, D., Fantini, P., Redaelli, A., Pirovano, A., Benvenuti, A., Pellizzer, F.: A phase change memory compact model for multilevel applications. IEEE Electron Device Lett. 28, 973-975 (2007)
Ryu, S.O., Yoon, S.M., Choi, K.J., Lee, N.Y., Park, Y.S., Lee, S.Y., Yu, B.G., Park, J.B., Shin, W.C.: Crystallization behavior and physical properties of Sb-excess Ge2Sb2+xTe5 thin films for phase change memory (PCM) devices. J. Electrochem. Soc. 153, G234-G237 (2006)
Jeong, T.H., Kim, M.R., Seo, H., Park, J.W., Yeon, C.: Crystal structure and microstructure of nitrogen-doped Ge2Sb2Te5 thin film. Jpn. J. Appl. Phys. Part 1 39, 2775-2779 (2000)
Kim, Y., Hwang, U., Cho, Y.J., Park, H.M., Cho, M.H., Cho, P.-S., Lee, J.-H.: Change in electrical resistance and thermal stability of nitrogen incorporated Ge2Sb2Te5 films. Appl. Phys. Lett. 90, 021908 (2007)
Gonzalez-Hernandez, J., Herrera-Fierro, P., Chao, B., Kovalenko, Y., Morales-Sanchez, E., Prokhorov, E.: Structure of oxygen-doped Ge:Sb:Te films. Thin Solid Films 503, 13-17 (2006)
Streetman, B.G., Banerjee, S.: Solid State Electronic Devices. 5th ed. Prentice Hall, Upper Saddle River, N.J. (2000)
Smith, R.A.: Semiconductors. 2d ed. Cambridge University Press, Cambridge ; New York (1978)
Measuring resistivity and Hall coefficient and determining Hall mobility in single-crystal semiconductors (ASTM Standard) (1986)
Nolas, G.S., Sharp, J., Goldsmid, H.J.: Thermoelectrics: Basic Principles and New Materials Developments. Springer, Berlin (2001)
Castro, D.T., Goux, L., Hurkx, G.A.M., Attenborough, K., Delhougne, R., Lisoni, J., Jedema, F.J., Zandt, M.A.A.i.t.A., Wolters, R.A.M., Gravesteijn, D.J., Verheijen, M.A., Kaiser, M., Weemaes, R.G.R., Wouters, D.J.: Evidence of the thermo-electric Thomson effect and influence on the program conditions and cell optimization in phase-change memory cells, In: Goux, L. (ed.) Electron Devices Meeting, IEEE International, p. 315-318, (2007)
Frumar, M., Tichy, L., Klikorka, J., Horak, J.: Preparation and some physical properties of semiconducting GeSb2Te4 crystals. Mater. Res. Bull. 7, 1075-1085 (1972)
Frumar, M., Tichy, L., Matyas, M., Zelizko, J.: Some physical-properties of semiconducting GeSb4Te7 crystals. Phys. Status Solidi A 22, 535-541 (1974)
Yanez-Limon, J.M., Gonzalez-Hernandez, J., Alvarado-Gil, J.J., Delgadillo, I., Vargas, H.: Thermal and electrical properties of the Ge:Sb:Te system by photoacoustic and Hall measurements. Phys. Rev. B: Condens. Matter 52, 16321-16324 (1995)
Lee, B.-S.: Optical and Electronic Properties, Nanoscale Structural Order, and Transformation Kinetics of Phase Change Materials. Ph. D. thesis, University of Illinois at Urbana-Champaign (2006)
Yamanaka, S., Ogawa, S., Morimoto, I., Ueshima, Y.: Electronic structures and optical properties of GeTe and Ge2Sb2Te5. Jpn. J. Appl. Phys. Part 1 37, 3327-3333 (1998)
Blakemore, J.S.: Semiconductor Statistics. Dover, New York (1987)
Kim, J.J., Kobayashi, K., Ikenaga, E., Kobata, M., Ueda, S., Matsunaga, T., Kifune, K., Kojima, R., Yamada, N.: Electronic structure of amorphous and crystalline (GeTe)(1-x)(Sb2Te3)(x) investigated using hard x-ray photoemission spectroscopy. Phys. Rev. B 76 115124 (2007)
Baily, S.A., Emin, D., Li, H.: Hall mobility of amorphous Ge2Sb2Te5. Solid State Commun. 139, 161-164 (2006)
Ielmini, D., Zhang, Y.G.: Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glasses. Appl. Phys. Lett. 90 192102 (2007)
Ovshinsky, S.R.: Reversible electrical switching phenomena in disordered structures. Phys. Rev. Lett. 21, 1450 (1968)
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Lee, BS., Bishop, S.G. (2009). Optical and Electrical Properties of Phase Change Materials. In: Raoux, S., Wuttig, M. (eds) Phase Change Materials. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-84874-7_9
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DOI: https://doi.org/10.1007/978-0-387-84874-7_9
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