Phase Change Memory Cell Concepts and Designs

  • Roberto Bez
  • Robert J. Gleixner
  • Fabio Pellizzer
  • Agostino Pirovano
  • Greg Atwood


Phase-Change Memories are the most promising candidates for next-generation semiconductor non-volatile memories, having the potential of improved performance compared to Flash as well as scalability to the deca-nanometer range. The development of this technology requires a deep understanding of the cell concept and a specific design of the cell architecture, as well as an extensive characterization of the electrical behavior and reliability of the cells. To this aim, in this chapter the most important topics of the phase change memory concept and designs will be reviewed. An up-dated technology overview will be presented, together with the methodology to electrically characterize the cell element; finally an extensive assessment of the cell reliability will be reported.


Data Retention Programming Current Storage Element Technology Node Reset Operation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Roberto Bez
    • 1
  • Robert J. Gleixner
    • 2
  • Fabio Pellizzer
    • 1
  • Agostino Pirovano
    • 1
  • Greg Atwood
    • 2
  1. 1.NumonyxAgrate Brianza (Milan)Italy
  2. 2.NumonyxSanta ClaraUSA

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