Abstract
Phase-Change Memories are the most promising candidates for next-generation semiconductor non-volatile memories, having the potential of improved performance compared to Flash as well as scalability to the deca-nanometer range. The development of this technology requires a deep understanding of the cell concept and a specific design of the cell architecture, as well as an extensive characterization of the electrical behavior and reliability of the cells. To this aim, in this chapter the most important topics of the phase change memory concept and designs will be reviewed. An up-dated technology overview will be presented, together with the methodology to electrically characterize the cell element; finally an extensive assessment of the cell reliability will be reported.
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References
Bez, R., Atwood, G.: Chalcogenide phase change memory: Scalable NVM for the next decade?. Non-Volatile Silicon Memory Workshop ‘06, pp. 12-15 (2006)
Pellizzer, F., Pirovano, A., Ottogalli, F., Magistretti, M., Scaravaggi, M., Zuliani, P., Tosi, M., Benvenuti, A., Besana, P., Cadeo, S., Marangon, T., Morandi, R., Piva, R., Spandre, A., Zonca, R., Modelli, A., Varesi, E., Lowrey, T., Lacaita, A., Casagrande, G., Cappelletti, P., Bez, R.: Novel μTrench phase change memory cell for embedded and stand alone non volatile memory applications. Symp. on VLSI Tech. Dig., pp. 18-19, (2004)
Ahn, S. J. , Song, Y.J., Jeong, C.W., Shin, J.M., Fai, Y., Hwang, Y.N. , Lee, S.H., Ryoo, K.C., Lee, S.Y. , Park, J.H. , Horii, H., Ha, Y.H., Yi, J.H., Kuh, B.J., Koh, G.H. , Jeong, G.T., Jeong H.S., Kim, K.: Highly manufacturable high density phase change memory of 64 Mb and beyond. IEDM Tech. Dig., pp. 907–910 (2004)
Pellizzer F., Benvenuti A., Gleixner B., Kim Y., Johnson B., Magistretti M., Marangon T, Pirovano A., Bez R., Atwood G.: A 90 nm phase change memory technology for stand-alone non-volatile memory applications. Symp. on VLSI Tech. Dig., pp. 122–123, (2006)
Ha, Y. H., Yi, J. H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In, Moon, J.T.: An edge contact type cell for phase change RAM featuring very low power consumption. Symp. on VLSI Tech. Dig., pp. 175-176 (2003)
Merget, F, Kim D.-H., Hadam, B., Haring Bolivar, P., Kurz, H.: Novel lateral cell design for low current phase change RAM memories. Non-Volatile Silicon Memory Workshop ‘04, pp. 30-31 (2004)
Lankhorst, M. H. R., Ketelaars, B. W. S. M. M., Wolters, R. A. M.: Low-cost and nanoscale non-volatile memory concept for future silicon chips. Nature Materials4, 347-352 (2005)
Pirovano, A., Pellizzer, F., Redaelli, A., Tortorelli, I., Varesi, E., Ottogalli ,F., Tosi, M., Besana, P., Cecchini, R., Piva, R., Magistretti, M., Scaravaggi, M., Mazzone, G., Petruzza, P., Bedeschi, F., Marangon, T., Modelli, A., Ielmini, D., Lacaita, A. L., Bez, R.: μTrench phase-change memory cell engineering and optimization. Proc. European Solid-State Device Research Conference ‘05, pp. 313-316 (2005)
Pirovano, A., Pellizzer, F., Tortorelli, I., Harrigan, R., Magistretti, M., Petruzza, P., Varesi, E., Erbetta, D., Marangon, T., Bedeschi, F., Fackenthal, R., Atwood, G., Bez, R.: Self-Aligned μTrench phase-change memory cell architecture for 90 nm technology and beyond. Proc. European Solid-State Device Research Conference ‘07, pp. 222-225 (2007)
Bez, R., Pellizzer, F.: Progress and perspective of phase-change memory. European\Phase-Change and Ovonic Symposium ‘07,http://www.epcos.org/library/papers/pdf_2007/paper03_RobertoBez.pdf (2007)
Ottogalli, F., Pirovano, A., Pellizzer, F., Tosi, M., Zuliani, P., Bonetalli, P., Bez, R.: Phase-change memory technology for embedded applications”. Proc. European Solid-State Device Research Conference ‘04, pp. 293-296 (2004).
Lacaita, A. L., Redaelli, A., Ielmini, D., Pellizzer, F., Pirovano, A., Benvenuti, A., Bez, R.: Electrothermal and phase-change dynamics in chalcogenide based memories. International Electron Device Meeting Tech. Dig., pp. 911-914 (2004)
Gleixner, B., Pirovano, A., Sarkar, J., Ottogalli, F., Tortorelli, I., Tosi, M., Bez, R.: Data retention characterization of phase-change memory arrays. Proc. International Reliability Physics Symposium ‘07, pp. 542-546 (2007)
Kim, K., Ahn, S.-J.: Reliability investigations for manufacturable high density PRAM. Proc. International Reliability Physics Symposium ‘05, pp. 157-162 (2005)
Pirovano, A., Redaelli, A., Pellizzer, F., Ottogalli, F., Tosi, M., Ielmini, D.: Reliability study of phase-change nonvolatile memories. IEEE Trans. On Device and Materials Reliability4, n. 3, 422-427 (2004)
Pirovano, A., Lacaita, A. L., Pellizzer, F., Kostylev, S. A., Benvenuti, A., Bez, R.: Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials. IEEE Trans. Electron Devices51, 714-719 (2004)
Redaelli, A., Ielmini D., Lacaita, A. L., Pellizzer, F.: Pirovano, A., Bez, R.: Impact of crystallization statistics on data retention for phase change memories. International Electron Device Meeting Tech. Dig., pp. 742-745 (2005)
Redaelli, A., Pirovano, A., Ielmini, D., Lacaita, A.: Intrinsic data retention in nanoscaled phase-change memories—part II: statistical analysis and prediction of failure time. IEEE Trans. Electron Devices53, 3040-3046 (2006)
Mantegazza, D., Ielmini, D., Pirovano, A., Gleixner, B., Lacaita, A. L., Varesi, E., Pellizzer, F., Bez R.: Electrical characterization of anomalous cells in phase change memory arrays. International Electron Device Meeting Tech. Dig., pp. 1-4 (2006)
Ovonic Unified Memory presentation,http://ovonyx.com/technology/technical-presentation.html. Accessed August 22, 2008
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Bez, R., Gleixner, R.J., Pellizzer, F., Pirovano, A., Atwood, G. (2009). Phase Change Memory Cell Concepts and Designs. In: Raoux, S., Wuttig, M. (eds) Phase Change Materials. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-84874-7_16
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DOI: https://doi.org/10.1007/978-0-387-84874-7_16
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