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Phase Change Materials pp 331–354Cite as

Phase Change Random Access Memory Advanced Prototype Devices and Scaling

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Abstract

This chapter describes the design, fabrication, and testing of advanced prototype Phase Change Random Access Memory (PCRAM) devices that have been used to study the scaling behavior of PCRAM. It compares various PCRAM designs and summarizes what has been learned from the performance of these devices regarding the switching properties and scaling behavior of PCRAM. In addition, specific test equipment and test procedures for the characterization of PCRAM are described.

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Authors and Affiliations

  1. Advanced Memory Research Dept. (ME130), Emerging Central Lab, Macronix Int. Co. Ltd, No. 16 Li-Hsin Road, Science Park, Hsinchu, Taiwan

    Dr. Yi-Chou Chen

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  1. Dr. Yi-Chou Chen
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Correspondence to Yi-Chou Chen .

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Editors and Affiliations

  1. IBM Almaden Research Center, 650 Harry Road, San Jose, CA, 95120, USA

    Simone Raoux

  2. 1. Physikalisches Institut (1A), RWTH University of Technology, 52056, Aachen, Germany

    Matthias Wuttig

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Chen, YC. (2009). Phase Change Random Access Memory Advanced Prototype Devices and Scaling. In: Raoux, S., Wuttig, M. (eds) Phase Change Materials. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-84874-7_15

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