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Phase Change Materials pp 299–329Cite as

Phase Change Memory Device Modeling

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Abstract

This chapter provides a review of the most important modeling issues for the simulation of the phase change memory (PCM) operation and reliability. After a short description of the PCM operation principle, the chapter will focus on electrical conduction characteristics for the amorphous and the crystalline phase of the chalcogenide material. The modeling of the programming operation and the methodology for calculating the programming current for phase transition will be described. Modeling-based methods for optimizing and scaling down the reset current will also be discussed. Cell reliability will finally be addressed, showing physics-based modeling approaches for crystallization and structural relaxation processes, which affect the stability of the amorphous phase and PCM data retention.

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Authors and Affiliations

  1. Dipartimento di Elettronica e Informazione, Politecnico di Milano, piazza Leonardo da Vinci 32, 20133, Milano, MI, Italy

    Prof. Daniele Ielmini

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  1. Prof. Daniele Ielmini
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Correspondence to Daniele Ielmini .

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Editors and Affiliations

  1. IBM Almaden Research Center, 650 Harry Road, San Jose, CA, 95120, USA

    Simone Raoux

  2. 1. Physikalisches Institut (1A), RWTH University of Technology, 52056, Aachen, Germany

    Matthias Wuttig

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Ielmini, D. (2009). Phase Change Memory Device Modeling. In: Raoux, S., Wuttig, M. (eds) Phase Change Materials. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-84874-7_14

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